AMOLEDs With a Pixel-Driving Architecture for Eliminating Crosstalk
A pixel-driving architecture for high-resolution active-matrix organic light-emitting diodes (AMOLEDs)-which eliminates crosstalk-is proposed. The proposed architecture utilizes the fact that the hysteresis characteristic of low-temperature-polysilicon thin-film transistors (TFTs) can be controlled...
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| Veröffentlicht in: | IEEE transactions on electron devices 2012-11, Vol.59 (11), p.3024-3029 |
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| container_issue | 11 |
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| container_title | IEEE transactions on electron devices |
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| creator | Kohno, T. Kageyama, H. Miyamoto, M. Nakamura, N. Akimoto, H. |
| description | A pixel-driving architecture for high-resolution active-matrix organic light-emitting diodes (AMOLEDs)-which eliminates crosstalk-is proposed. The proposed architecture utilizes the fact that the hysteresis characteristic of low-temperature-polysilicon thin-film transistors (TFTs) can be controlled by negative bias. The high-amplitude negative-bias precharge in the architecture can suppress hysteresis in one frame length by means of a simple pixel circuit composed of three TFTs and one capacitor. The result of applying this architecture is a high-resolution AMOLED that generates no crosstalk. A 3.0-in 202 × 267-ppi full-color panel based on this pixel-driving architecture was developed, and it was confirmed that this panel produces moving images that are free of crosstalk. |
| doi_str_mv | 10.1109/TED.2012.2213256 |
| format | Article |
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The proposed architecture utilizes the fact that the hysteresis characteristic of low-temperature-polysilicon thin-film transistors (TFTs) can be controlled by negative bias. The high-amplitude negative-bias precharge in the architecture can suppress hysteresis in one frame length by means of a simple pixel circuit composed of three TFTs and one capacitor. The result of applying this architecture is a high-resolution AMOLED that generates no crosstalk. A 3.0-in 202 × 267-ppi full-color panel based on this pixel-driving architecture was developed, and it was confirmed that this panel produces moving images that are free of crosstalk.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2012.2213256</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Active matrix organic light emitting diodes ; active-matrix organic light-emitting diode (OLED) (AMOLED) ; Applied sciences ; Architecture ; Capacitors ; Circuits ; Crosstalk ; Dielectric, amorphous and glass solid devices ; Display ; Electronics ; Exact sciences and technology ; free of crosstalk ; Hysteresis ; Logic gates ; Optoelectronic devices ; Panels ; Programming ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The proposed architecture utilizes the fact that the hysteresis characteristic of low-temperature-polysilicon thin-film transistors (TFTs) can be controlled by negative bias. The high-amplitude negative-bias precharge in the architecture can suppress hysteresis in one frame length by means of a simple pixel circuit composed of three TFTs and one capacitor. The result of applying this architecture is a high-resolution AMOLED that generates no crosstalk. A 3.0-in 202 × 267-ppi full-color panel based on this pixel-driving architecture was developed, and it was confirmed that this panel produces moving images that are free of crosstalk.</description><subject>Active matrix organic light emitting diodes</subject><subject>active-matrix organic light-emitting diode (OLED) (AMOLED)</subject><subject>Applied sciences</subject><subject>Architecture</subject><subject>Capacitors</subject><subject>Circuits</subject><subject>Crosstalk</subject><subject>Dielectric, amorphous and glass solid devices</subject><subject>Display</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>free of crosstalk</subject><subject>Hysteresis</subject><subject>Logic gates</subject><subject>Optoelectronic devices</subject><subject>Panels</subject><subject>Programming</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Thin film transistors</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkM1Lw0AQxRdRsFbvgpeACF5Sd_azOZY0fkClHioel-1mY7emie6mov-9G1p68DQM85uZ9x5Cl4BHADi7WxTTEcFARoQAJVwcoQFwLtNMMHGMBhjDOM3omJ6isxDWsRWMkQHKJ8_zWTENyZvrVolOXtyPrdOpd9-ueU8m3qxcZ0239TapWp8Utdu4Rnf9MPdtCJ2uP87RSaXrYC_2dYhe74tF_pjO5g9P-WSWGspZl1Kpl5JySYzkNErBAFYCy8olLqtSWwZRHueGVkYbJqQETSxmzNhliSFb0iG63d399O3X1oZObVwwtq51Y9ttUECBi0zKMY_o9T903W59E9UpgPiTSSxopPCOMr0Vbyv16d1G-18FWPWpqpiq6lNV-1Tjys3-sA5G15XXjXHhsEcEZ4yynrvacc5aexgLEn1LRv8A4nF9XA</recordid><startdate>20121101</startdate><enddate>20121101</enddate><creator>Kohno, T.</creator><creator>Kageyama, H.</creator><creator>Miyamoto, M.</creator><creator>Nakamura, N.</creator><creator>Akimoto, H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Thin film transistors</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kohno, T.</creatorcontrib><creatorcontrib>Kageyama, H.</creatorcontrib><creatorcontrib>Miyamoto, M.</creatorcontrib><creatorcontrib>Nakamura, N.</creatorcontrib><creatorcontrib>Akimoto, H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kohno, T.</au><au>Kageyama, H.</au><au>Miyamoto, M.</au><au>Nakamura, N.</au><au>Akimoto, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>AMOLEDs With a Pixel-Driving Architecture for Eliminating Crosstalk</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2012-11-01</date><risdate>2012</risdate><volume>59</volume><issue>11</issue><spage>3024</spage><epage>3029</epage><pages>3024-3029</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A pixel-driving architecture for high-resolution active-matrix organic light-emitting diodes (AMOLEDs)-which eliminates crosstalk-is proposed. The proposed architecture utilizes the fact that the hysteresis characteristic of low-temperature-polysilicon thin-film transistors (TFTs) can be controlled by negative bias. The high-amplitude negative-bias precharge in the architecture can suppress hysteresis in one frame length by means of a simple pixel circuit composed of three TFTs and one capacitor. The result of applying this architecture is a high-resolution AMOLED that generates no crosstalk. A 3.0-in 202 × 267-ppi full-color panel based on this pixel-driving architecture was developed, and it was confirmed that this panel produces moving images that are free of crosstalk.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2012.2213256</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.3024-3029 |
| issn | 0018-9383 1557-9646 |
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| subjects | Active matrix organic light emitting diodes active-matrix organic light-emitting diode (OLED) (AMOLED) Applied sciences Architecture Capacitors Circuits Crosstalk Dielectric, amorphous and glass solid devices Display Electronics Exact sciences and technology free of crosstalk Hysteresis Logic gates Optoelectronic devices Panels Programming Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thin film transistors Transistors |
| title | AMOLEDs With a Pixel-Driving Architecture for Eliminating Crosstalk |
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