$Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High- \kappa Dielectrics$

Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High- \kappa Dielectrics

This paper presents a capacitance model and mobility extraction method through the use of tapered transmission line theory for accumulation-mode MOSCAP test structures. The analytical model accounts for the discrepancies commonly found when measuring the capacitance of nontraditional MOSCAP architec...

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Veröffentlicht in:	IEEE transactions on electron devices 2012-10, Vol.59 (10), p.2662-2666
Hauptverfasser:	Bothe, K. M., von Hauff, P. A., Afshar, A., Foroughi-Abari, A., Cadien, K. C., Barlage, D. W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Capacitance measurement Channels Devices Dielectric, amorphous and glass solid devices Dielectrics Dimensional measurements Educational institutions Electron mobility Electronics Exact sciences and technology Gallium nitride Mathematical analysis mobility extraction MOS capacitors Semiconductor device measurement Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Testing, measurement, noise and reliability Transistors Transmission line measurements
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