Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35μm light emission at room temperature
We have investigated the growth of multilayered type-II GaSb/GaAs self-assembled quantum dot (QD) structure. We show that the key point for the growth of the multilayed GaSb/GaAs QDs lies in how to switch the V elements: Sb and As. It is found that, after the dot deposition, a short exposure to As a...
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| Veröffentlicht in: | Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2012-08, Vol.45, p.173-176 |
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| container_title | Physica. E, Low-dimensional systems & nanostructures |
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| creator | Cui, Kai Ma, Wenquan Huang, Jianliang Wei, Yang Zhang, Yanhua Cao, Yulian Gu, Yongxian Yang, Tao |
| description | We have investigated the growth of multilayered type-II GaSb/GaAs self-assembled quantum dot (QD) structure. We show that the key point for the growth of the multilayed GaSb/GaAs QDs lies in how to switch the V elements: Sb and As. It is found that, after the dot deposition, a short exposure to As atmosphere smoothes out the GaSb 3D islands and transforms the structure into 2D-like while the 3D islands remain in an Sb soak. There is a large PL energy separation of 214meV between the QDs and the corresponding 2D-like structure due to the smoothing-out effect. The PL peak of the multilayered dots is at 1.35μm at room temperature (RT) and only digresses from 1.3μm insignificantly for a broad range of temperature from 13K to RT.
► A multilayered type-II GaSb/GaAs QD structure was successfully grown by MBE. ► The PL emission of the QDs is at 1.35μm at room temperature. ► The key point for multilayered QD growth lies in how to switch the V elements of Sb and As. ► A short exposure to As smoothes out the dots while an Sb soak makes the dots persistent. |
| doi_str_mv | 10.1016/j.physe.2012.07.022 |
| format | Article |
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► A multilayered type-II GaSb/GaAs QD structure was successfully grown by MBE. ► The PL emission of the QDs is at 1.35μm at room temperature. ► The key point for multilayered QD growth lies in how to switch the V elements of Sb and As. ► A short exposure to As smoothes out the dots while an Sb soak makes the dots persistent.</description><identifier>ISSN: 1386-9477</identifier><identifier>EISSN: 1873-1759</identifier><identifier>DOI: 10.1016/j.physe.2012.07.022</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Methods of nanofabrication ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Physics ; Quantum dots ; Self-assembly</subject><ispartof>Physica. E, Low-dimensional systems & nanostructures, 2012-08, Vol.45, p.173-176</ispartof><rights>2012 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physe.2012.07.022$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26436813$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Cui, Kai</creatorcontrib><creatorcontrib>Ma, Wenquan</creatorcontrib><creatorcontrib>Huang, Jianliang</creatorcontrib><creatorcontrib>Wei, Yang</creatorcontrib><creatorcontrib>Zhang, Yanhua</creatorcontrib><creatorcontrib>Cao, Yulian</creatorcontrib><creatorcontrib>Gu, Yongxian</creatorcontrib><creatorcontrib>Yang, Tao</creatorcontrib><title>Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35μm light emission at room temperature</title><title>Physica. E, Low-dimensional systems & nanostructures</title><description>We have investigated the growth of multilayered type-II GaSb/GaAs self-assembled quantum dot (QD) structure. We show that the key point for the growth of the multilayed GaSb/GaAs QDs lies in how to switch the V elements: Sb and As. It is found that, after the dot deposition, a short exposure to As atmosphere smoothes out the GaSb 3D islands and transforms the structure into 2D-like while the 3D islands remain in an Sb soak. There is a large PL energy separation of 214meV between the QDs and the corresponding 2D-like structure due to the smoothing-out effect. The PL peak of the multilayered dots is at 1.35μm at room temperature (RT) and only digresses from 1.3μm insignificantly for a broad range of temperature from 13K to RT.
► A multilayered type-II GaSb/GaAs QD structure was successfully grown by MBE. ► The PL emission of the QDs is at 1.35μm at room temperature. ► The key point for multilayered QD growth lies in how to switch the V elements of Sb and As. ► A short exposure to As smoothes out the dots while an Sb soak makes the dots persistent.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of nanofabrication</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</subject><subject>Physics</subject><subject>Quantum dots</subject><subject>Self-assembly</subject><issn>1386-9477</issn><issn>1873-1759</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNotkL1OwzAUhSMEEqXwBCxeGJP6J7HjgaGqoFQCMQCz5dg31FXSBNsB5d14Bp6JlHKXc4dPR0dfklwTnBFM-GKX9dsxQEYxoRkWGab0JJmRUrCUiEKeTj8reSpzIc6TixB2eLpS5rMkPA1NdI0ewYNFcewh3WzQWr9Ui7VeBhSgqVMdArRVMwEfg97HoUW2iyhEP5g4eEBfLm4RyVjx892ixr1vI4LWheC6PdIR-a5rUYS2B68P_GVyVusmwNV_zpO3-7vX1UP6-LzerJaPKVAmY1qxEqoK88JWpqgKgrHNpWQ1x5IK4NiKAgwU0lZa1pJqlpe55aLMtaWmppzNk5tjb6-D0U3t9d64oHrvWu1HRXnOeEnYxN0eOZjGfDrwKhgHewPWeTBR2c4pgtXBtNqpP9PqYFphoSbT7BeibnYy</recordid><startdate>20120801</startdate><enddate>20120801</enddate><creator>Cui, Kai</creator><creator>Ma, Wenquan</creator><creator>Huang, Jianliang</creator><creator>Wei, Yang</creator><creator>Zhang, Yanhua</creator><creator>Cao, Yulian</creator><creator>Gu, Yongxian</creator><creator>Yang, Tao</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope></search><sort><creationdate>20120801</creationdate><title>Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35μm light emission at room temperature</title><author>Cui, Kai ; Ma, Wenquan ; Huang, Jianliang ; Wei, Yang ; Zhang, Yanhua ; Cao, Yulian ; Gu, Yongxian ; Yang, Tao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e239t-b38ebb065dbc5b5100d4993f60927e60d75ece59dba9f92a3484d6784ad2cf263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of nanofabrication</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</topic><topic>Physics</topic><topic>Quantum dots</topic><topic>Self-assembly</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cui, Kai</creatorcontrib><creatorcontrib>Ma, Wenquan</creatorcontrib><creatorcontrib>Huang, Jianliang</creatorcontrib><creatorcontrib>Wei, Yang</creatorcontrib><creatorcontrib>Zhang, Yanhua</creatorcontrib><creatorcontrib>Cao, Yulian</creatorcontrib><creatorcontrib>Gu, Yongxian</creatorcontrib><creatorcontrib>Yang, Tao</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Physica. E, Low-dimensional systems & nanostructures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cui, Kai</au><au>Ma, Wenquan</au><au>Huang, Jianliang</au><au>Wei, Yang</au><au>Zhang, Yanhua</au><au>Cao, Yulian</au><au>Gu, Yongxian</au><au>Yang, Tao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35μm light emission at room temperature</atitle><jtitle>Physica. E, Low-dimensional systems & nanostructures</jtitle><date>2012-08-01</date><risdate>2012</risdate><volume>45</volume><spage>173</spage><epage>176</epage><pages>173-176</pages><issn>1386-9477</issn><eissn>1873-1759</eissn><abstract>We have investigated the growth of multilayered type-II GaSb/GaAs self-assembled quantum dot (QD) structure. We show that the key point for the growth of the multilayed GaSb/GaAs QDs lies in how to switch the V elements: Sb and As. It is found that, after the dot deposition, a short exposure to As atmosphere smoothes out the GaSb 3D islands and transforms the structure into 2D-like while the 3D islands remain in an Sb soak. There is a large PL energy separation of 214meV between the QDs and the corresponding 2D-like structure due to the smoothing-out effect. The PL peak of the multilayered dots is at 1.35μm at room temperature (RT) and only digresses from 1.3μm insignificantly for a broad range of temperature from 13K to RT.
► A multilayered type-II GaSb/GaAs QD structure was successfully grown by MBE. ► The PL emission of the QDs is at 1.35μm at room temperature. ► The key point for multilayered QD growth lies in how to switch the V elements of Sb and As. ► A short exposure to As smoothes out the dots while an Sb soak makes the dots persistent.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physe.2012.07.022</doi><tpages>4</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of nanofabrication Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum dots Self-assembly |
| title | Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35μm light emission at room temperature |
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