Estimating Information-Theoretical nand Flash Memory Storage Capacity and its Implication to Memory System Design Space Exploration

Today and future NAND flash memory will heavily rely on system-level fault-tolerance techniques such as error correction code (ECC) to ensure the overall system storage integrity. Since ECC demands the storage of coding redundancy and hence degrades effective cell storage efficiency, it is highly de...

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Veröffentlicht in:	IEEE transactions on very large scale integration (VLSI) systems 2012-09, Vol.20 (9), p.1705-1714
Hauptverfasser:	Guiqiang Dong, Yangyang Pan, Ningde Xie, Varanasi, C., Tong Zhang
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Channel capacity Circuit properties Coding Cycles Design. Technologies. Operation analysis. Testing Digital circuits Dynamical systems Efficiency Electric, optical and optoelectronic circuits Electronic circuits Electronics Endurance Estimating Exact sciences and technology Fault tolerance Flash memory Flash memory (computers) Information theory Integrated circuits Integrated circuits by function (including memories and processors) Interference Magnetic tape Memory management nand flash Noise Redundancy retention Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices storage capacity Studies tradeoff Very large scale integration
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