Packaging Effects of Multiple X-Band SiGe LNAs Embedded in an Organic LCP Substrate

Interconnects in radio frequency (RF) packages have a strong tendency to deteriorate RF performance, especially in high-frequency systems. In this paper, comparison is made between the wirebonded and embedded flip-chip packages. X-band silicon-germanium low-noise amplifiers are used to evaluate the...

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Veröffentlicht in:	IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2012-08, Vol.2 (8), p.1351-1360
Hauptverfasser:	Poh, Chung Hang John, Patterson, C. E., Bhattacharya, S. K., Philips, S. D., Lourenco, N. E., Cressler, J. D., Papapolymerou, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Circuit properties Circuits of signal characteristics conditioning (including delay circuits) Coplanar waveguides Design. Technologies. Operation analysis. Testing Dies Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gold Integrated circuit interconnections Integrated circuit packaging Integrated circuits liquid crystal polymer Liquid crystal polymers low-noise amplifiers Noise levels Packages Packaging Power combiners Radio frequencies Radio frequency RF modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe BiCMOS Silicon germanides Silicon germanium Software Substrates wilkinson power divider X-band
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