Single crystal growth of Ga2(SexTe1−x)3 semiconductors and defect studies via positron annihilation spectroscopy
Small single crystals of Ga2(SexTe1−x)3 semiconductors, for x=0.1, 0.2, 0.3, were obtained via modified Bridgman growth techniques. High resolution powder x-ray diffractometry confirms a zincblende cubic structure, with additional satellite peaks observed near the (111) Bragg line. This suggests the...
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| creator | Abdul-Jabbar, N.M. Bourret-Courchesne, E.D. Wirth, B.D. |
| description | Small single crystals of Ga2(SexTe1−x)3 semiconductors, for x=0.1, 0.2, 0.3, were obtained via modified Bridgman growth techniques. High resolution powder x-ray diffractometry confirms a zincblende cubic structure, with additional satellite peaks observed near the (111) Bragg line. This suggests the presence of ordered vacancy planes along the [111] direction that have been previously observed in Ga2Te3. Defect studies via positron annihilation spectroscopy show an average positron lifetime of ≈400ps in bulk as-grown specimens. Such a large lifetime suggests that the positron annihilation sites in these materials are dominated by defects. Moreover, analyzing the electron momenta via coincidence Doppler broadening measurements suggests a strong presence of large open-volume defects, likely to be vacancy clusters or voids.
► Ga2(SexTe1−x)3 growth via modified Bridgman methods. ► High-resolution x-ray powder diffractometry on Ga2(SexTe1−x)3. ► Positron annihilation spectroscopy on Ga2(SexTe1−x)3. |
| doi_str_mv | 10.1016/j.jcrysgro.2012.02.011 |
| format | Conference Proceeding |
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► Ga2(SexTe1−x)3 growth via modified Bridgman methods. ► High-resolution x-ray powder diffractometry on Ga2(SexTe1−x)3. ► Positron annihilation spectroscopy on Ga2(SexTe1−x)3.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2012.02.011</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Crystal structure ; A1. Defects ; A1. Directional solidification ; A1. High resolution x-ray diffraction ; A2. Growth from melt ; B2. Semiconducting materials ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Growth from melts; zone melting and refining ; Materials science ; Methods of crystal growth; physics of crystal growth ; Phase diagrams and microstructures developed by solidification and solid-solid phase transformations ; Physics ; Solidification ; Structure of solids and liquids; crystallography ; Structure of specific crystalline solids ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Journal of crystal growth, 2012, Vol.352 (1), p.31-34</ispartof><rights>2012 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2012.02.011$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26220028$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Abdul-Jabbar, N.M.</creatorcontrib><creatorcontrib>Bourret-Courchesne, E.D.</creatorcontrib><creatorcontrib>Wirth, B.D.</creatorcontrib><title>Single crystal growth of Ga2(SexTe1−x)3 semiconductors and defect studies via positron annihilation spectroscopy</title><title>Journal of crystal growth</title><description>Small single crystals of Ga2(SexTe1−x)3 semiconductors, for x=0.1, 0.2, 0.3, were obtained via modified Bridgman growth techniques. High resolution powder x-ray diffractometry confirms a zincblende cubic structure, with additional satellite peaks observed near the (111) Bragg line. This suggests the presence of ordered vacancy planes along the [111] direction that have been previously observed in Ga2Te3. Defect studies via positron annihilation spectroscopy show an average positron lifetime of ≈400ps in bulk as-grown specimens. Such a large lifetime suggests that the positron annihilation sites in these materials are dominated by defects. Moreover, analyzing the electron momenta via coincidence Doppler broadening measurements suggests a strong presence of large open-volume defects, likely to be vacancy clusters or voids.
► Ga2(SexTe1−x)3 growth via modified Bridgman methods. ► High-resolution x-ray powder diffractometry on Ga2(SexTe1−x)3. ► Positron annihilation spectroscopy on Ga2(SexTe1−x)3.</description><subject>A1. Crystal structure</subject><subject>A1. Defects</subject><subject>A1. Directional solidification</subject><subject>A1. High resolution x-ray diffraction</subject><subject>A2. Growth from melt</subject><subject>B2. Semiconducting materials</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Growth from melts; zone melting and refining</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</subject><subject>Physics</subject><subject>Solidification</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Structure of specific crystalline solids</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNo1UMFKAzEQDaJgrf6C5CLoYWsmu9lNb0rRKhQ8tPeQJtM2ZbtZkm1t_8Czn-iXmFKFYYaZefN48wi5BTYABuXjerA24RCXwQ84Az5gKQDOSA9klWeCMX5OeinzjPFCXpKrGNeMpUtgPRKmrlnWSI8Mna5pYvnsVtQv6Fjz-ynuZwg_X9_7h5xG3DjjG7s1nQ-R6sZSiws0HY3d1jqMdOc0bX10XfBN2jdu5WrdudTENuGCj8a3h2tysdB1xJu_2iez15fZ6C2bfIzfR8-TDGUlMwFQCVsaMEJoLW1eVUO0ucT5EBgWYHNdihznYoh5IU1RDEV6sRKy4rLENOyTuxNtq6PR9SLoxrio2uA2OhwULzlPpsiEezrhMGnZOQwqGoeNQetCEq2sdwqYOlqt1urfanW0WrEUAPkvMyJ3ug</recordid><startdate>20120801</startdate><enddate>20120801</enddate><creator>Abdul-Jabbar, N.M.</creator><creator>Bourret-Courchesne, E.D.</creator><creator>Wirth, B.D.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope></search><sort><creationdate>20120801</creationdate><title>Single crystal growth of Ga2(SexTe1−x)3 semiconductors and defect studies via positron annihilation spectroscopy</title><author>Abdul-Jabbar, N.M. ; Bourret-Courchesne, E.D. ; Wirth, B.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e878-51175d6c1c55aa8d3779ed38eb910e41d3a653eb59e348c44950227587286e9e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>A1. Crystal structure</topic><topic>A1. Defects</topic><topic>A1. Directional solidification</topic><topic>A1. High resolution x-ray diffraction</topic><topic>A2. Growth from melt</topic><topic>B2. Semiconducting materials</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Growth from melts; zone melting and refining</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</topic><topic>Physics</topic><topic>Solidification</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Structure of specific crystalline solids</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Abdul-Jabbar, N.M.</creatorcontrib><creatorcontrib>Bourret-Courchesne, E.D.</creatorcontrib><creatorcontrib>Wirth, B.D.</creatorcontrib><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Abdul-Jabbar, N.M.</au><au>Bourret-Courchesne, E.D.</au><au>Wirth, B.D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Single crystal growth of Ga2(SexTe1−x)3 semiconductors and defect studies via positron annihilation spectroscopy</atitle><btitle>Journal of crystal growth</btitle><date>2012-08-01</date><risdate>2012</risdate><volume>352</volume><issue>1</issue><spage>31</spage><epage>34</epage><pages>31-34</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Small single crystals of Ga2(SexTe1−x)3 semiconductors, for x=0.1, 0.2, 0.3, were obtained via modified Bridgman growth techniques. High resolution powder x-ray diffractometry confirms a zincblende cubic structure, with additional satellite peaks observed near the (111) Bragg line. This suggests the presence of ordered vacancy planes along the [111] direction that have been previously observed in Ga2Te3. Defect studies via positron annihilation spectroscopy show an average positron lifetime of ≈400ps in bulk as-grown specimens. Such a large lifetime suggests that the positron annihilation sites in these materials are dominated by defects. Moreover, analyzing the electron momenta via coincidence Doppler broadening measurements suggests a strong presence of large open-volume defects, likely to be vacancy clusters or voids.
► Ga2(SexTe1−x)3 growth via modified Bridgman methods. ► High-resolution x-ray powder diffractometry on Ga2(SexTe1−x)3. ► Positron annihilation spectroscopy on Ga2(SexTe1−x)3.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2012.02.011</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2012, Vol.352 (1), p.31-34 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_26220028 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | A1. Crystal structure A1. Defects A1. Directional solidification A1. High resolution x-ray diffraction A2. Growth from melt B2. Semiconducting materials Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Physics Solidification Structure of solids and liquids crystallography Structure of specific crystalline solids Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Single crystal growth of Ga2(SexTe1−x)3 semiconductors and defect studies via positron annihilation spectroscopy |
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