Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure : Heterostructure Microelectronics with TWHM 2011

Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure : Heterostructure Microelectronics with TWHM 2011

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Veröffentlicht in:IEICE transactions on electronics 2012, Vol.95 (8), p.1343-1347
Hauptverfasser: DEGUCHI, Tadayoshi, TOMITA, Hideshi, KAMADA, Atsushi, ARAI, Manabu, YAMASAKI, Kimiyoshi, EGAWA, Takashi
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Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page 1347
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container_title IEICE transactions on electronics
container_volume 95
creator DEGUCHI, Tadayoshi
TOMITA, Hideshi
KAMADA, Atsushi
ARAI, Manabu
YAMASAKI, Kimiyoshi
EGAWA, Takashi
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language eng
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subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure : Heterostructure Microelectronics with TWHM 2011
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