High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects
Low- and high-field transports are investigated for HfO 2 -based MOSFETs with ultrathin equivalent oxide thickness (UTEOT) achieved by a remote interface layer (IL) scavenging method. A detailed comparison with a SiON reference demonstrates none of the detrimental effects from HfO 2 -related Coulomb...
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| Veröffentlicht in: | IEEE transactions on electron devices 2012-07, Vol.59 (7), p.1856-1862 |
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| container_title | IEEE transactions on electron devices |
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| creator | Trojman, L. Pantisano, L. Ragnarsson, L. |
| description | Low- and high-field transports are investigated for HfO 2 -based MOSFETs with ultrathin equivalent oxide thickness (UTEOT) achieved by a remote interface layer (IL) scavenging method. A detailed comparison with a SiON reference demonstrates none of the detrimental effects from HfO 2 -related Coulomb nor phonon additional scattering on the high-field velocity. Increased surface roughness may reduce the high-field velocity by 20% for the device with the thinnest IL. This is explained by an increase of the backscattering which reduces the ballistic efficiency for the shortest devices . However, the on-state current for UTEOT devices has the best performance at a given high-lateral-field velocity. Therefore, EOT scaling remains a valid tool for I ON -performance improvement for CMOS scaling also with new architectures and substrates. |
| doi_str_mv | 10.1109/TED.2012.2193402 |
| format | Article |
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A detailed comparison with a SiON reference demonstrates none of the detrimental effects from HfO 2 -related Coulomb nor phonon additional scattering on the high-field velocity. Increased surface roughness may reduce the high-field velocity by 20% for the device with the thinnest IL. This is explained by an increase of the backscattering which reduces the ballistic efficiency for the shortest devices . However, the on-state current for UTEOT devices has the best performance at a given high-lateral-field velocity. Therefore, EOT scaling remains a valid tool for I ON -performance improvement for CMOS scaling also with new architectures and substrates.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2012.2193402</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Backscatter ; Backscattering ; cryogenic temperature ; Design. 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Solid state devices ; short-channel devices ; Temperature measurement ; Transistors ; ultrathin equivalent oxide thickness (UTEOT)</subject><ispartof>IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1856-1862</ispartof><rights>2015 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-136580728366e4ddd190bbc3d5fa7c72330e74ef3be3a1e3a1d8855f836f0573</citedby><cites>FETCH-LOGICAL-c327t-136580728366e4ddd190bbc3d5fa7c72330e74ef3be3a1e3a1d8855f836f0573</cites><orcidid>0000-0003-2316-4959</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6194299$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,776,780,792,881,27903,27904,54735</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6194299$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26015595$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-02952204$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Trojman, L.</creatorcontrib><creatorcontrib>Pantisano, L.</creatorcontrib><creatorcontrib>Ragnarsson, L.</creatorcontrib><title>High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Low- and high-field transports are investigated for HfO 2 -based MOSFETs with ultrathin equivalent oxide thickness (UTEOT) achieved by a remote interface layer (IL) scavenging method. A detailed comparison with a SiON reference demonstrates none of the detrimental effects from HfO 2 -related Coulomb nor phonon additional scattering on the high-field velocity. Increased surface roughness may reduce the high-field velocity by 20% for the device with the thinnest IL. This is explained by an increase of the backscattering which reduces the ballistic efficiency for the shortest devices . However, the on-state current for UTEOT devices has the best performance at a given high-lateral-field velocity. Therefore, EOT scaling remains a valid tool for I ON -performance improvement for CMOS scaling also with new architectures and substrates.</description><subject>Applied sciences</subject><subject>Backscatter</subject><subject>Backscattering</subject><subject>cryogenic temperature</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>Hafnium compounds</subject><subject>hbox{HfO}_{2}</subject><subject>high- kappa /metal-gate MOSFET</subject><subject>high-field transport</subject><subject>Integrated circuits</subject><subject>Logic gates</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>mobility</subject><subject>MOSFETs</subject><subject>on-state current</subject><subject>Performance evaluation</subject><subject>quasi-ballistic</subject><subject>Scattering</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>short-channel devices</subject><subject>Temperature measurement</subject><subject>Transistors</subject><subject>ultrathin equivalent oxide thickness (UTEOT)</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM9LwzAUx4MoOKd3wUsuHjy05ncbb0M7N5hsYMFjydJki3TtSMrA_96Ujh0ej_fe9_MOHwAeMUoxRvK1LD5SgjBJCZaUIXIFJpjzLJGCiWswQQjniaQ5vQV3IfzGUTBGJsAv3G6fzJ1palh61YZj53u4bE8m9G6nete10HYeEp60B_i1_p4XZYA_rt9DlAo2LIt1-RaJ3rs2OA03xkfgoFptoGpruFFeBdfHS2Gt0X24BzdWNcE8nPsUlPHp-yJZrT-X77NVoinJ-gRTwXOUkZwKYVhd11ii7VbTmluV6YxQikzGjKVbQxUeqs5zzm3MW8QzOgUv49u9aqqjdwfl_6pOuWoxW1XDDhHJCUHshGMWjVntuxC8sRcAo2rQW0W91aC3OuuNyPOIHFXQqrHRnXbhwhGBon7JY-5pzDljzOUssGRESvoP9IqApw</recordid><startdate>20120701</startdate><enddate>20120701</enddate><creator>Trojman, L.</creator><creator>Pantisano, L.</creator><creator>Ragnarsson, L.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-2316-4959</orcidid></search><sort><creationdate>20120701</creationdate><title>High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects</title><author>Trojman, L. ; Pantisano, L. ; Ragnarsson, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-136580728366e4ddd190bbc3d5fa7c72330e74ef3be3a1e3a1d8855f836f0573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Backscatter</topic><topic>Backscattering</topic><topic>cryogenic temperature</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Engineering Sciences</topic><topic>Exact sciences and technology</topic><topic>Hafnium compounds</topic><topic>hbox{HfO}_{2}</topic><topic>high- kappa /metal-gate MOSFET</topic><topic>high-field transport</topic><topic>Integrated circuits</topic><topic>Logic gates</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>mobility</topic><topic>MOSFETs</topic><topic>on-state current</topic><topic>Performance evaluation</topic><topic>quasi-ballistic</topic><topic>Scattering</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>short-channel devices</topic><topic>Temperature measurement</topic><topic>Transistors</topic><topic>ultrathin equivalent oxide thickness (UTEOT)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Trojman, L.</creatorcontrib><creatorcontrib>Pantisano, L.</creatorcontrib><creatorcontrib>Ragnarsson, L.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Trojman, L.</au><au>Pantisano, L.</au><au>Ragnarsson, L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2012-07-01</date><risdate>2012</risdate><volume>59</volume><issue>7</issue><spage>1856</spage><epage>1862</epage><pages>1856-1862</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Low- and high-field transports are investigated for HfO 2 -based MOSFETs with ultrathin equivalent oxide thickness (UTEOT) achieved by a remote interface layer (IL) scavenging method. A detailed comparison with a SiON reference demonstrates none of the detrimental effects from HfO 2 -related Coulomb nor phonon additional scattering on the high-field velocity. Increased surface roughness may reduce the high-field velocity by 20% for the device with the thinnest IL. This is explained by an increase of the backscattering which reduces the ballistic efficiency for the shortest devices . However, the on-state current for UTEOT devices has the best performance at a given high-lateral-field velocity. Therefore, EOT scaling remains a valid tool for I ON -performance improvement for CMOS scaling also with new architectures and substrates.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2012.2193402</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-2316-4959</orcidid></addata></record> |
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| subjects | Applied sciences Backscatter Backscattering cryogenic temperature Design. Technologies. Operation analysis. Testing Electronics Engineering Sciences Exact sciences and technology Hafnium compounds hbox{HfO}_{2} high- kappa /metal-gate MOSFET high-field transport Integrated circuits Logic gates Micro and nanotechnologies Microelectronics mobility MOSFETs on-state current Performance evaluation quasi-ballistic Scattering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices short-channel devices Temperature measurement Transistors ultrathin equivalent oxide thickness (UTEOT) |
| title | High-Field Transport Investigation for 25-nm MOSFETs With 0.64-nm EOT: Intrinsic Performance and Parasitic Effects |
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