On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface

With the continuing miniaturization of electronic devices, the atomic layer deposition (ALD) technique has become the preferred choice for the deposition of dense, conformal thin films. Efficient precursors that enable low-temperature deposition processes are of critical importance to ensure high-qu...

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Veröffentlicht in:	Journal of physical chemistry. C 2012-01, Vol.116 (1), p.947-952
Hauptverfasser:	Han, Bo, Zhang, Qingfan, Wu, Jinping, Han, Bing, Karwacki, Eugene J, Derecskei, Agnes, Xiao, Manchao, Lei, Xinjian, O’Neill, Mark L, Cheng, Hansong
Format:	Artikel
Sprache:	eng
Schlagworte:	C: Surfaces, Interfaces, Catalysis Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Theory and models of film growth Vapor phase epitaxy growth from vapor phase
Online-Zugang:	Volltext
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