V-doped SnS2: a new intermediate band material for a better use of the solar spectrum

Intermediate band materials can boost photovoltaic efficiency through an increase in photocurrent without photovoltage degradation thanks to the use of two sub-bandgap photons to achieve a full electronic transition from the valence band to the conduction band of a semiconductor structure. After hav...

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Veröffentlicht in:	Physical chemistry chemical physics : PCCP 2011-01, Vol.13 (45), p.241-247
Hauptverfasser:	Wahnón, Perla, Conesa, José C, Palacios, Pablo, Lucena, Raquel, Aguilera, Irene, Seminovski, Yohanna, Fresno, Fernando
Format:	Artikel
Sprache:	eng
Schlagworte:	Cations Chemistry Electronic structure Electronics Exact sciences and technology General and physical chemistry Mathematical analysis Photochemistry Photonic band gaps Physical chemistry of induced reactions (with radiations, particles and ultrasonics) Semiconductors Tin Vanadium
Online-Zugang:	Volltext
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