The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf-In-Zn-O TFTs

The effect of active-layer thickness and back-channel conductivity on the subthreshold transfer characteristics of hafnium-indium-zinc-oxide (HIZO) thin-film transistors was studied. Experiments show that subthreshold humps in the transfer curves become more pronounced as the active-layer thickness...

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Veröffentlicht in:	IEEE electron device letters 2011-08, Vol.32 (8), p.1077-1079
Hauptverfasser:	Maeng, W. J., Joon Seok Park, Hyun-Suk Kim, Eok Soo Kim, Kyoung Seok Son, Tae Sang Kim, Myungkwan Ryu, Sangyoon Lee
Format:	Artikel
Sprache:	eng
Schlagworte:	Active-layer thickness Applied sciences back channel Channels Conductivity Devices Electronics Exact sciences and technology Gates Hafnium hump Logic gates Mathematical analysis Pixel Plasmas Screening Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thin film transistors thin-film transistors (TFTs) Threshold voltage Transistors
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