The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf-In-Zn-O TFTs
The effect of active-layer thickness and back-channel conductivity on the subthreshold transfer characteristics of hafnium-indium-zinc-oxide (HIZO) thin-film transistors was studied. Experiments show that subthreshold humps in the transfer curves become more pronounced as the active-layer thickness...
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| Veröffentlicht in: | IEEE electron device letters 2011-08, Vol.32 (8), p.1077-1079 |
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| container_title | IEEE electron device letters |
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| creator | Maeng, W. J. Joon Seok Park Hyun-Suk Kim Eok Soo Kim Kyoung Seok Son Tae Sang Kim Myungkwan Ryu Sangyoon Lee |
| description | The effect of active-layer thickness and back-channel conductivity on the subthreshold transfer characteristics of hafnium-indium-zinc-oxide (HIZO) thin-film transistors was studied. Experiments show that subthreshold humps in the transfer curves become more pronounced as the active-layer thickness increases, in the presence of a highly conductive back channel. With a highly conductive thin back channel, subthreshold humps were observed as the total active-layer thickness exceeded 80 nm. The above results can be interpreted as a consequence of a reduction in the effective gate field as the active thickness exceeds the "screening length". The screening length of the HIZO layer is calculated to be approximately 78 nm, and accordingly, as the active thickness exceeds this value, subthreshold humps that are anticipated to originate from the back-channel conduction appear. |
| doi_str_mv | 10.1109/LED.2011.2156756 |
| format | Article |
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J. ; Joon Seok Park ; Hyun-Suk Kim ; Eok Soo Kim ; Kyoung Seok Son ; Tae Sang Kim ; Myungkwan Ryu ; Sangyoon Lee</creator><creatorcontrib>Maeng, W. J. ; Joon Seok Park ; Hyun-Suk Kim ; Eok Soo Kim ; Kyoung Seok Son ; Tae Sang Kim ; Myungkwan Ryu ; Sangyoon Lee</creatorcontrib><description>The effect of active-layer thickness and back-channel conductivity on the subthreshold transfer characteristics of hafnium-indium-zinc-oxide (HIZO) thin-film transistors was studied. Experiments show that subthreshold humps in the transfer curves become more pronounced as the active-layer thickness increases, in the presence of a highly conductive back channel. With a highly conductive thin back channel, subthreshold humps were observed as the total active-layer thickness exceeded 80 nm. The above results can be interpreted as a consequence of a reduction in the effective gate field as the active thickness exceeds the "screening length". The screening length of the HIZO layer is calculated to be approximately 78 nm, and accordingly, as the active thickness exceeds this value, subthreshold humps that are anticipated to originate from the back-channel conduction appear.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2011.2156756</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Active-layer thickness ; Applied sciences ; back channel ; Channels ; Conductivity ; Devices ; Electronics ; Exact sciences and technology ; Gates ; Hafnium ; hump ; Logic gates ; Mathematical analysis ; Pixel ; Plasmas ; Screening ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Thin film transistors ; thin-film transistors (TFTs) ; Threshold voltage ; Transistors</subject><ispartof>IEEE electron device letters, 2011-08, Vol.32 (8), p.1077-1079</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Aug 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-8060ab11fcd51d8405cd4060884d8ceed5f3fa3c808339a2f2dc81dff240e76b3</citedby><cites>FETCH-LOGICAL-c352t-8060ab11fcd51d8405cd4060884d8ceed5f3fa3c808339a2f2dc81dff240e76b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5873119$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5873119$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24415937$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Maeng, W. J.</creatorcontrib><creatorcontrib>Joon Seok Park</creatorcontrib><creatorcontrib>Hyun-Suk Kim</creatorcontrib><creatorcontrib>Eok Soo Kim</creatorcontrib><creatorcontrib>Kyoung Seok Son</creatorcontrib><creatorcontrib>Tae Sang Kim</creatorcontrib><creatorcontrib>Myungkwan Ryu</creatorcontrib><creatorcontrib>Sangyoon Lee</creatorcontrib><title>The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf-In-Zn-O TFTs</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>The effect of active-layer thickness and back-channel conductivity on the subthreshold transfer characteristics of hafnium-indium-zinc-oxide (HIZO) thin-film transistors was studied. Experiments show that subthreshold humps in the transfer curves become more pronounced as the active-layer thickness increases, in the presence of a highly conductive back channel. With a highly conductive thin back channel, subthreshold humps were observed as the total active-layer thickness exceeded 80 nm. The above results can be interpreted as a consequence of a reduction in the effective gate field as the active thickness exceeds the "screening length". The screening length of the HIZO layer is calculated to be approximately 78 nm, and accordingly, as the active thickness exceeds this value, subthreshold humps that are anticipated to originate from the back-channel conduction appear.</description><subject>Active-layer thickness</subject><subject>Applied sciences</subject><subject>back channel</subject><subject>Channels</subject><subject>Conductivity</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gates</subject><subject>Hafnium</subject><subject>hump</subject><subject>Logic gates</subject><subject>Mathematical analysis</subject><subject>Pixel</subject><subject>Plasmas</subject><subject>Screening</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Thin film transistors</subject><subject>thin-film transistors (TFTs)</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkUFrHCEYhqW00G3ae6EXKZSe3OioM84x3W6awEIOnV56EVc_GZOJk6pT2Gt_eV12ySEnQZ_38eN7EfrI6Jox2l_utt_XDWVs3TDZdrJ9hVZMSkWobPlrtKKdYIQz2r5F73K-p5QJ0YkV-jeMgLfegy149vjKlvAXyM4cIOFhDPYhQs7YRIe_GftANqOJESa8maNbjmwoBzxHXKrl57IvY4I8zpPDQzIx-yqpiWRsgRRyCTYfP7nx5DaS35Hc4eF6yO_RG2-mDB_O5wX6db0dNjdkd_fjdnO1I5bLphBFW2r2jHnrJHNKUGmdqHdKCacsgJOee8Otoorz3jS-cVYx530jKHTtnl-gryfvU5r_LJCLfgzZwjSZCPOSdU-7nqteyEp-fkHez0uKdTjd1-22HZV9hegJsmnOOYHXTyk8mnTQjOpjJbpWoo-V6HMlNfLl7DXZmsnXHdmQn3ONEKyKu8p9OnEBAJ6fpeo4Yz3_DyTblAo</recordid><startdate>20110801</startdate><enddate>20110801</enddate><creator>Maeng, W. J.</creator><creator>Joon Seok Park</creator><creator>Hyun-Suk Kim</creator><creator>Eok Soo Kim</creator><creator>Kyoung Seok Son</creator><creator>Tae Sang Kim</creator><creator>Myungkwan Ryu</creator><creator>Sangyoon Lee</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20110801</creationdate><title>The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf-In-Zn-O TFTs</title><author>Maeng, W. J. ; Joon Seok Park ; Hyun-Suk Kim ; Eok Soo Kim ; Kyoung Seok Son ; Tae Sang Kim ; Myungkwan Ryu ; Sangyoon Lee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c352t-8060ab11fcd51d8405cd4060884d8ceed5f3fa3c808339a2f2dc81dff240e76b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Active-layer thickness</topic><topic>Applied sciences</topic><topic>back channel</topic><topic>Channels</topic><topic>Conductivity</topic><topic>Devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gates</topic><topic>Hafnium</topic><topic>hump</topic><topic>Logic gates</topic><topic>Mathematical analysis</topic><topic>Pixel</topic><topic>Plasmas</topic><topic>Screening</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Thin film transistors</topic><topic>thin-film transistors (TFTs)</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Maeng, W. J.</creatorcontrib><creatorcontrib>Joon Seok Park</creatorcontrib><creatorcontrib>Hyun-Suk Kim</creatorcontrib><creatorcontrib>Eok Soo Kim</creatorcontrib><creatorcontrib>Kyoung Seok Son</creatorcontrib><creatorcontrib>Tae Sang Kim</creatorcontrib><creatorcontrib>Myungkwan Ryu</creatorcontrib><creatorcontrib>Sangyoon Lee</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Maeng, W. J.</au><au>Joon Seok Park</au><au>Hyun-Suk Kim</au><au>Eok Soo Kim</au><au>Kyoung Seok Son</au><au>Tae Sang Kim</au><au>Myungkwan Ryu</au><au>Sangyoon Lee</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf-In-Zn-O TFTs</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2011-08-01</date><risdate>2011</risdate><volume>32</volume><issue>8</issue><spage>1077</spage><epage>1079</epage><pages>1077-1079</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The effect of active-layer thickness and back-channel conductivity on the subthreshold transfer characteristics of hafnium-indium-zinc-oxide (HIZO) thin-film transistors was studied. Experiments show that subthreshold humps in the transfer curves become more pronounced as the active-layer thickness increases, in the presence of a highly conductive back channel. With a highly conductive thin back channel, subthreshold humps were observed as the total active-layer thickness exceeded 80 nm. The above results can be interpreted as a consequence of a reduction in the effective gate field as the active thickness exceeds the "screening length". The screening length of the HIZO layer is calculated to be approximately 78 nm, and accordingly, as the active thickness exceeds this value, subthreshold humps that are anticipated to originate from the back-channel conduction appear.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2011.2156756</doi><tpages>3</tpages></addata></record> |
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| subjects | Active-layer thickness Applied sciences back channel Channels Conductivity Devices Electronics Exact sciences and technology Gates Hafnium hump Logic gates Mathematical analysis Pixel Plasmas Screening Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thin film transistors thin-film transistors (TFTs) Threshold voltage Transistors |
| title | The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf-In-Zn-O TFTs |
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