A 60 GHz Tunable Output Profile Power Amplifier in 65 nm CMOS
A fully integrated three-stage 60 GHz power amplifier with amplitude/phase compensation is realized in 65 nm CMOS. An adaptive feedback bias scheme with three control knobs is proposed to extend the linear operating region. At a supply voltage of 1 V, the fully differential amplifier achieves a line...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2011-07, Vol.21 (7), p.377-379 |
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| container_end_page | 379 |
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| container_issue | 7 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Liu, Jenny Yi-Chun Qun Jane Gu Tang, Adrian Ning-Yi Wang Chang, Mau-Chung Frank |
| description | A fully integrated three-stage 60 GHz power amplifier with amplitude/phase compensation is realized in 65 nm CMOS. An adaptive feedback bias scheme with three control knobs is proposed to extend the linear operating region. At a supply voltage of 1 V, the fully differential amplifier achieves a linear gain of 15 dB and occupies a compact area of 0.056 mm 2 . It achieves a minimal P sat -P 1dB separation of 0.6 dB by extending the P 1dB by 8.5 dB. To our best knowledge, this is the smallest P sat -P 1dB separation reported to date. With on-chip phase compensation, the output phase variation is reduced by 57%. |
| doi_str_mv | 10.1109/LMWC.2011.2152386 |
| format | Article |
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An adaptive feedback bias scheme with three control knobs is proposed to extend the linear operating region. At a supply voltage of 1 V, the fully differential amplifier achieves a linear gain of 15 dB and occupies a compact area of 0.056 mm 2 . It achieves a minimal P sat -P 1dB separation of 0.6 dB by extending the P 1dB by 8.5 dB. To our best knowledge, this is the smallest P sat -P 1dB separation reported to date. With on-chip phase compensation, the output phase variation is reduced by 57%.</description><subject>Amplification</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Circuit faults</subject><subject>Circuit properties</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>Compensation</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric potential</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Feedback</subject><subject>Gain</subject><subject>Integrated circuits</subject><subject>Logic gates</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>millimeter wave</subject><subject>Noise levels</subject><subject>power amplifier (PA)</subject><subject>Power amplifiers</subject><subject>Power generation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Separation</subject><subject>System-on-a-chip</subject><subject>transformers</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEtLAzEUhQdRsFZ_gLgJguBmam5ekyxclKKt0NKCFZdDJk1gyjxq0kH015uhpQtX91zudw-HkyS3gEcAWD3NF5-TEcEAIwKcUCnOkgFwLlPIBDvvNYUUKFaXyVUIW4yBSQaD5HmMBEbT2S9ad40uKouW3X7X7dHKt66M66r9th6N611VujKqskGCo6ZGk8Xy_Tq5cLoK9uY4h8nH68t6Mkvny-nbZDxPDeV8n9IMg-GCZdoo4RSXchOV5gVQV2Cq5EZowxxQqwucESap4FgTa6SghXaEDpPHg-_Ot1-dDfu8LoOxVaUb23YhB0yBKEUZj-j9P3Tbdr6J6XKZcYwV4SJCcICMb0Pw1uU7X9ba_0SnvO8z7_vM-z7zY5_x5-ForIPRlfO6MWU4PRIWQzMFkbs7cKW19nTmUslI0D_Punnm</recordid><startdate>20110701</startdate><enddate>20110701</enddate><creator>Liu, Jenny Yi-Chun</creator><creator>Qun Jane Gu</creator><creator>Tang, Adrian</creator><creator>Ning-Yi Wang</creator><creator>Chang, Mau-Chung Frank</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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An adaptive feedback bias scheme with three control knobs is proposed to extend the linear operating region. At a supply voltage of 1 V, the fully differential amplifier achieves a linear gain of 15 dB and occupies a compact area of 0.056 mm 2 . It achieves a minimal P sat -P 1dB separation of 0.6 dB by extending the P 1dB by 8.5 dB. To our best knowledge, this is the smallest P sat -P 1dB separation reported to date. With on-chip phase compensation, the output phase variation is reduced by 57%.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2011.2152386</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE microwave and wireless components letters, 2011-07, Vol.21 (7), p.377-379 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Amplification Amplifiers Applied sciences Capacitance Circuit faults Circuit properties CMOS CMOS integrated circuits Compensation Design. Technologies. Operation analysis. Testing Electric potential Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Feedback Gain Integrated circuits Logic gates Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits millimeter wave Noise levels power amplifier (PA) Power amplifiers Power generation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Separation System-on-a-chip transformers |
| title | A 60 GHz Tunable Output Profile Power Amplifier in 65 nm CMOS |
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