Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs

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Veröffentlicht in:	IEEE transactions on electron devices 2011-07, Vol.58 (7), p.1972-1978
Hauptverfasser:	WEIKE WANG, HWANG, James C. M, YI XUAN, YE, Peide D
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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container_end_page	1978
container_issue	7
container_start_page	1972
container_title	IEEE transactions on electron devices
container_volume	58
creator	WEIKE WANG HWANG, James C. M YI XUAN YE, Peide D
description
doi_str_mv	10.1109/TED.2011.2146255
format	Article
fullrecord	<record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_24327645</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24327645</sourcerecordid><originalsourceid>FETCH-LOGICAL-p115t-8d13348d34fd6d3fb5c618aa2c017c1151c89fbed95c9483e6db091a244684c93</originalsourceid><addsrcrecordid>eNotjM1LwzAchoMoOKd3j7l4zJZfvpocy6zbYKMH53mkSQORmI6myPbfO3Cnl-fh4UXoFegCgJrloXlfMAqwYCAUk_IOzUDKihgl1D2aUQqaGK75I3oq5fuKSgg2Q5s623QpseAh4Cb1bhqHjPdDF1OcLjhmvM2__VjikMl-8D2uE2v5cpvPawvkXBe8bz8_mkN5Rg_BptK_3HaOvq56tSG7dr1d1TtyApAT0R44F9pzEbzyPHTSKdDWMkehctcEnDah672RzgjNe-U7asAyIZQWzvA5evv_PdnibAqjzS6W42mMP3a8HJngrFJC8j8w9E0V</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs</title><source>IEEE Electronic Library (IEL)</source><creator>WEIKE WANG ; HWANG, James C. M ; YI XUAN ; YE, Peide D</creator><creatorcontrib>WEIKE WANG ; HWANG, James C. M ; YI XUAN ; YE, Peide D</creatorcontrib><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2011.2146255</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1972-1978</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24327645$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>WEIKE WANG</creatorcontrib><creatorcontrib>HWANG, James C. M</creatorcontrib><creatorcontrib>YI XUAN</creatorcontrib><creatorcontrib>YE, Peide D</creatorcontrib><title>Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs</title><title>IEEE transactions on electron devices</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNotjM1LwzAchoMoOKd3j7l4zJZfvpocy6zbYKMH53mkSQORmI6myPbfO3Cnl-fh4UXoFegCgJrloXlfMAqwYCAUk_IOzUDKihgl1D2aUQqaGK75I3oq5fuKSgg2Q5s623QpseAh4Cb1bhqHjPdDF1OcLjhmvM2__VjikMl-8D2uE2v5cpvPawvkXBe8bz8_mkN5Rg_BptK_3HaOvq56tSG7dr1d1TtyApAT0R44F9pzEbzyPHTSKdDWMkehctcEnDah672RzgjNe-U7asAyIZQWzvA5evv_PdnibAqjzS6W42mMP3a8HJngrFJC8j8w9E0V</recordid><startdate>20110701</startdate><enddate>20110701</enddate><creator>WEIKE WANG</creator><creator>HWANG, James C. M</creator><creator>YI XUAN</creator><creator>YE, Peide D</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope></search><sort><creationdate>20110701</creationdate><title>Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs</title><author>WEIKE WANG ; HWANG, James C. M ; YI XUAN ; YE, Peide D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p115t-8d13348d34fd6d3fb5c618aa2c017c1151c89fbed95c9483e6db091a244684c93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>WEIKE WANG</creatorcontrib><creatorcontrib>HWANG, James C. M</creatorcontrib><creatorcontrib>YI XUAN</creatorcontrib><creatorcontrib>YE, Peide D</creatorcontrib><collection>Pascal-Francis</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>WEIKE WANG</au><au>HWANG, James C. M</au><au>YI XUAN</au><au>YE, Peide D</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>2011-07-01</date><risdate>2011</risdate><volume>58</volume><issue>7</issue><spage>1972</spage><epage>1978</epage><pages>1972-1978</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1109/TED.2011.2146255</doi><tpages>7</tpages></addata></record>
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ispartof	IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1972-1978
issn	0018-9383 1557-9646
language	eng
recordid	cdi_pascalfrancis_primary_24327645
source	IEEE Electronic Library (IEL)
subjects	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
title	Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T06%3A04%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Analysis%20of%20Electron%20Mobility%20in%20Inversion-Mode%20Al2O3/InxGa1-xAs%20MOSFETs&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=WEIKE%20WANG&rft.date=2011-07-01&rft.volume=58&rft.issue=7&rft.spage=1972&rft.epage=1978&rft.pages=1972-1978&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2011.2146255&rft_dat=%3Cpascalfrancis%3E24327645%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true