Growth of n-type γ-GuCl with improved carrier concentration by pulsed DC sputtering: Structural, electronic and UV emission properties
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| Veröffentlicht in: | Thin solid films 2011, Vol.519 (18), p.6064-6068 |
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| container_end_page | 6068 |
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| container_issue | 18 |
| container_start_page | 6064 |
| container_title | Thin solid films |
| container_volume | 519 |
| creator | RAJANI, K. V LUCAS, F. Olabanji DANIELS, S DANIELUK, D BRADLEY, A. L COWLEY, A ALAM, M. M MCNALLY, P. J |
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| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0040-6090 |
| ispartof | Thin solid films, 2011, Vol.519 (18), p.6064-6068 |
| issn | 0040-6090 1879-2731 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_24303278 |
| source | Elsevier ScienceDirect Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Surface and interface electron states Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology |
| title | Growth of n-type γ-GuCl with improved carrier concentration by pulsed DC sputtering: Structural, electronic and UV emission properties |
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