Dielectric reliability of 70 nm pitch air-gap interconnect structures

Scaling air-gap interconnects to 70 nm pitch is demonstrated for the first time by combining air-gap technology (SiO 2 etch-back and non-conformal CVD) and the double patterning approach. A capacitance reduction of 45% was measured on the air-gaps compared to the SiO 2 reference. The reliability per...

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