Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors

Realistic Monte Carlo simulations for the avalanche gain of absorbed X-ray photons were carried out in a study of the relationship between avalanche gain and energy resolution for semiconductor X-ray avalanche photodiodes (APDs). The work explored how the distribution of gains, which directly affect...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2011-06, Vol.58 (6), p.1696-1701
Hauptverfasser:	Chee Hing Tan, Gomes, R B, David, J P R, Barnett, A M, Bassford, D J, Lees, J E, Jo Shien Ng
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Applied sciences Avalanche gain Avalanche photodiodes avalanche photodiodes (APDs) Avalanches Computer simulation Electronics Energy resolution Exact sciences and technology Gain General equipment and techniques impact ionization Instruments, apparatus, components and techniques common to several branches of physics and astronomy Ionization coefficients Noise Optoelectronic devices Photonics Photons Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Silicon spectroscopy X- and γ-ray instruments and techniques X- and γ-ray sources, mirrors, gratings and detectors X-ray X-rays
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!