TiCl4 Soak on NiSi: Selective Formation of Pure Sub-Nanometer NiTi to Reduce Contact Resistance
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| Veröffentlicht in: | IEEE transactions on semiconductor manufacturing 2011-05, Vol.24 (2), p.325-332 |
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| container_end_page | 332 |
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| container_issue | 2 |
| container_start_page | 325 |
| container_title | IEEE transactions on semiconductor manufacturing |
| container_volume | 24 |
| creator | FUTASE, Takuya HASHIKAWA, Naoto YAMAMOTO, Hirohiko TANIMOTO, Hisanori |
| description | |
| doi_str_mv | 10.1109/TSM.2010.2099673 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0894-6507 |
| ispartof | IEEE transactions on semiconductor manufacturing, 2011-05, Vol.24 (2), p.325-332 |
| issn | 0894-6507 1558-2345 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_24162480 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | TiCl4 Soak on NiSi: Selective Formation of Pure Sub-Nanometer NiTi to Reduce Contact Resistance |
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