A Degenerately Doped In0.53Ga0.47As Bipolar Junction Transistor

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Veröffentlicht in:	IEEE electron device letters 2011, Vol.32 (1), p.21-23
Hauptverfasser:	YALON, E, COHEN ELIAS, D, GAVRILOV, A, COHEN, S, HALEVY, R, RITTER, D
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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doi_str_mv	10.1109/LED.2010.2084557
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source	IEEE Electronic Library (IEL)
subjects	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
title	A Degenerately Doped In0.53Ga0.47As Bipolar Junction Transistor
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