Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2010, Vol.31 (12), p.1404-1406
Hauptverfasser: KWANG HWAN JI, KIM, Ji-In, MO, Yeon-Gon, JONG HAN JEONG, YANG, Shinhyuk, HWANG, Chi-Sun, PARK, Sang-Hee Ko, RYU, Myung-Kwan, LEE, Sang-Yoon, JAE KYEONG JEONG
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 1406
container_issue 12
container_start_page 1404
container_title IEEE electron device letters
container_volume 31
creator KWANG HWAN JI
KIM, Ji-In
MO, Yeon-Gon
JONG HAN JEONG
YANG, Shinhyuk
HWANG, Chi-Sun
PARK, Sang-Hee Ko
RYU, Myung-Kwan
LEE, Sang-Yoon
JAE KYEONG JEONG
description
format Article
fullrecord <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_23669633</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>23669633</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_236696333</originalsourceid><addsrcrecordid>eNqNjMFqwkAURQexYGz7D2_TZWDiJGPdalsbEF0oFLqR18lEn8RJmPcs9e-bhR_g6h44hztQSVYUr6kurBmqRE_zLDWZtiM1Zj5pneX5NE9UXLTnDiMK_XrYyqW6QhtgRYejpGWoLs5XMCfk3kXPDGVgwR9qSPqwhnL5vYFdxMDE0kaGL5IjbGn9BxiqHvQElige3sg33kkkx0_qocaG_fNtH9XLx_tu8Zl2yA6bun9zxPsu0hnjdT8x1s6sMebe7h85e01y</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics</title><source>IEEE Electronic Library (IEL)</source><creator>KWANG HWAN JI ; KIM, Ji-In ; MO, Yeon-Gon ; JONG HAN JEONG ; YANG, Shinhyuk ; HWANG, Chi-Sun ; PARK, Sang-Hee Ko ; RYU, Myung-Kwan ; LEE, Sang-Yoon ; JAE KYEONG JEONG</creator><creatorcontrib>KWANG HWAN JI ; KIM, Ji-In ; MO, Yeon-Gon ; JONG HAN JEONG ; YANG, Shinhyuk ; HWANG, Chi-Sun ; PARK, Sang-Hee Ko ; RYU, Myung-Kwan ; LEE, Sang-Yoon ; JAE KYEONG JEONG</creatorcontrib><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>IEEE electron device letters, 2010, Vol.31 (12), p.1404-1406</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,4025</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=23669633$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KWANG HWAN JI</creatorcontrib><creatorcontrib>KIM, Ji-In</creatorcontrib><creatorcontrib>MO, Yeon-Gon</creatorcontrib><creatorcontrib>JONG HAN JEONG</creatorcontrib><creatorcontrib>YANG, Shinhyuk</creatorcontrib><creatorcontrib>HWANG, Chi-Sun</creatorcontrib><creatorcontrib>PARK, Sang-Hee Ko</creatorcontrib><creatorcontrib>RYU, Myung-Kwan</creatorcontrib><creatorcontrib>LEE, Sang-Yoon</creatorcontrib><creatorcontrib>JAE KYEONG JEONG</creatorcontrib><title>Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics</title><title>IEEE electron device letters</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqNjMFqwkAURQexYGz7D2_TZWDiJGPdalsbEF0oFLqR18lEn8RJmPcs9e-bhR_g6h44hztQSVYUr6kurBmqRE_zLDWZtiM1Zj5pneX5NE9UXLTnDiMK_XrYyqW6QhtgRYejpGWoLs5XMCfk3kXPDGVgwR9qSPqwhnL5vYFdxMDE0kaGL5IjbGn9BxiqHvQElige3sg33kkkx0_qocaG_fNtH9XLx_tu8Zl2yA6bun9zxPsu0hnjdT8x1s6sMebe7h85e01y</recordid><startdate>2010</startdate><enddate>2010</enddate><creator>KWANG HWAN JI</creator><creator>KIM, Ji-In</creator><creator>MO, Yeon-Gon</creator><creator>JONG HAN JEONG</creator><creator>YANG, Shinhyuk</creator><creator>HWANG, Chi-Sun</creator><creator>PARK, Sang-Hee Ko</creator><creator>RYU, Myung-Kwan</creator><creator>LEE, Sang-Yoon</creator><creator>JAE KYEONG JEONG</creator><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope></search><sort><creationdate>2010</creationdate><title>Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics</title><author>KWANG HWAN JI ; KIM, Ji-In ; MO, Yeon-Gon ; JONG HAN JEONG ; YANG, Shinhyuk ; HWANG, Chi-Sun ; PARK, Sang-Hee Ko ; RYU, Myung-Kwan ; LEE, Sang-Yoon ; JAE KYEONG JEONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_236696333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KWANG HWAN JI</creatorcontrib><creatorcontrib>KIM, Ji-In</creatorcontrib><creatorcontrib>MO, Yeon-Gon</creatorcontrib><creatorcontrib>JONG HAN JEONG</creatorcontrib><creatorcontrib>YANG, Shinhyuk</creatorcontrib><creatorcontrib>HWANG, Chi-Sun</creatorcontrib><creatorcontrib>PARK, Sang-Hee Ko</creatorcontrib><creatorcontrib>RYU, Myung-Kwan</creatorcontrib><creatorcontrib>LEE, Sang-Yoon</creatorcontrib><creatorcontrib>JAE KYEONG JEONG</creatorcontrib><collection>Pascal-Francis</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KWANG HWAN JI</au><au>KIM, Ji-In</au><au>MO, Yeon-Gon</au><au>JONG HAN JEONG</au><au>YANG, Shinhyuk</au><au>HWANG, Chi-Sun</au><au>PARK, Sang-Hee Ko</au><au>RYU, Myung-Kwan</au><au>LEE, Sang-Yoon</au><au>JAE KYEONG JEONG</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics</atitle><jtitle>IEEE electron device letters</jtitle><date>2010</date><risdate>2010</risdate><volume>31</volume><issue>12</issue><spage>1404</spage><epage>1406</epage><pages>1404-1406</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub></addata></record>
fulltext fulltext
identifier ISSN: 0741-3106
ispartof IEEE electron device letters, 2010, Vol.31 (12), p.1404-1406
issn 0741-3106
1558-0563
language eng
recordid cdi_pascalfrancis_primary_23669633
source IEEE Electronic Library (IEL)
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNx and Si02 Gate Dielectrics
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T06%3A24%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Comparative%20Study%20on%20Light-Induced%20Bias%20Stress%20Instability%20of%20IGZO%20Transistors%20With%20SiNx%20and%20Si02%20Gate%20Dielectrics&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=KWANG%20HWAN%20JI&rft.date=2010&rft.volume=31&rft.issue=12&rft.spage=1404&rft.epage=1406&rft.pages=1404-1406&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E23669633%3C/pascalfrancis%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true