Phase Change Memory: NANOELECTRONICS RESEARCH FOR BEYOND CMOS INFORMATION PROCESSING

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Veröffentlicht in:	Proceedings of the IEEE 2010, Vol.98 (12), p.2201-2227
Hauptverfasser:	WONG, H.-S. Philip, RAOUX, Simone, KIM, Sangbum, JIALE LIANG, REIFENBERG, John P, RAJENDRAN, Bipin, ASHEGHI, Mehdi, GOODSON, Kenneth E
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information Testing, measurement, noise and reliability
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creator	WONG, H.-S. Philip RAOUX, Simone KIM, Sangbum JIALE LIANG REIFENBERG, John P RAJENDRAN, Bipin ASHEGHI, Mehdi GOODSON, Kenneth E
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subjects	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information Testing, measurement, noise and reliability
title	Phase Change Memory: NANOELECTRONICS RESEARCH FOR BEYOND CMOS INFORMATION PROCESSING
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