Characterization of interface states in a-Si : H/c-Si heterojunctions by an expression of the theoretical diffusion capacitance

Capacitance spectroscopy under illumination and at a forward bias close to the open-circuit voltage ( V oc ) has recently been proposed to characterize interface states in a-Si : H/c-Si heterojunctions, and the interface defect density, D it , is estimated from the simulations of capacitance. In thi...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2010-12, Vol.43 (49), p.495102-495102
Hauptverfasser:	Zhong, C L, Yao, R H, Geng, K W
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Carrier density Condensed matter: electronic structure, electrical, magnetic, and optical properties Density Diffusion Diffusion length Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in multilayers, nanoscale materials and structures Exact sciences and technology Heterojunctions Minority carriers Physics Thin films and multilayers Voltage
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