Vertical transport of photo-excited carriers for excitonic recombinations in modulation doped GaAs/Ga1-xAlxAs heterojunctions

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Veröffentlicht in:	Solid state communications 1998-05, Vol.106 (8), p.495-499
Hauptverfasser:	SHEN, J. X, OKA, Y, OSSAU, W, LANDWEHR, G, FRIEDLAND, K.-J, HEY, R, PLOOG, K, WEIMANN, G
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Photoluminescence Physics
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doi_str_mv	10.1016/S0038-1098(98)00092-1
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identifier	ISSN: 0038-1098
ispartof	Solid state communications, 1998-05, Vol.106 (8), p.495-499
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language	eng
recordid	cdi_pascalfrancis_primary_2332411
source	ScienceDirect Journals (5 years ago - present)
subjects	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Photoluminescence Physics
title	Vertical transport of photo-excited carriers for excitonic recombinations in modulation doped GaAs/Ga1-xAlxAs heterojunctions
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