Electrical TCAD Simulations of a Germanium pMOSFET Technology

A commercial technology computer-aided design device simulator was extended to allow electrical simulations of sub-100-nm germanium pMOSFETs. Parameters for generation/recombination mechanisms (Shockley-Read-Hall, trap-assisted tunneling, and band-to-band tunneling) and mobility models (impurity sca...

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Veröffentlicht in:	IEEE transactions on electron devices 2010-10, Vol.57 (10), p.2539-2546
Hauptverfasser:	Hellings, Geert, Eneman, Geert, Krom, Raymond, De Jaeger, B, Mitard, Jérôme, De Keersgieter, An, Hoffmann, Thomas, Meuris, Marc, De Meyer, Kristin
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Computer aided design Computer simulation Devices Electronics Energy use Exact sciences and technology Gates Germanium Halos Implants Junctions Logic gates Mathematical models modeling MOSFET MOSFET circuits Scattering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor process modeling Silicon technology computer-aided design (TCAD) simulations Transistors Tunneling
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