A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 μ m surface emitting laser diodes

A distributed Bragg reflector (DBR) utilizing the digital alloy Al 0.9Ga 0.1As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 μm optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a high...

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Veröffentlicht in:	Solid state communications 2010-10, Vol.150 (39), p.1955-1958
Hauptverfasser:	Cho, N.K., Kim, K.W., Song, J.D., Choi, W.J., Lee, J.I.
Format:	Artikel
Sprache:	eng
Schlagworte:	A. Thin films B. Epitaxy D. Optical properties E. Light absorption and reflection Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes
Online-Zugang:	Volltext
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