A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 μ m surface emitting laser diodes
A distributed Bragg reflector (DBR) utilizing the digital alloy Al 0.9Ga 0.1As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 μm optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a high...
Gespeichert in:
| Veröffentlicht in: | Solid state communications 2010-10, Vol.150 (39), p.1955-1958 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1958 |
|---|---|
| container_issue | 39 |
| container_start_page | 1955 |
| container_title | Solid state communications |
| container_volume | 150 |
| creator | Cho, N.K. Kim, K.W. Song, J.D. Choi, W.J. Lee, J.I. |
| description | A distributed Bragg reflector (DBR) utilizing the digital alloy Al
0.9Ga
0.1As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 μm optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a highly abrupt boundary of AlAs and GaAs, which supports the formation of a digital-alloy Al
0.9Ga
0.1As layer. The measurement showed that the digital-alloy AlGaAs/GaAs DBR had similar reflection spectra with enhanced uniform distribution over the whole substrate surface compared to the analog-alloy one. In the digital-alloy Al
0.9Ga
0.1As/GaAs DBR cavity, the reflection dip position was measured at around 1273 nm and the standard deviation of the distribution of the reflection dip was 1.31 nm in wavelength over 1/4 of a three-inch wafer. |
| doi_str_mv | 10.1016/j.ssc.2010.05.010 |
| format | Article |
| fullrecord | <record><control><sourceid>elsevier_pasca</sourceid><recordid>TN_cdi_pascalfrancis_primary_23242042</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0038109810002814</els_id><sourcerecordid>S0038109810002814</sourcerecordid><originalsourceid>FETCH-LOGICAL-e237t-994cd92404cc9239fc1a2e4d3d710b49c09c689152a67a215e3dbd855d0070243</originalsourceid><addsrcrecordid>eNotUMtKAzEUDaJgrX6Au2xczvTmMY_gqhatQsGNrkOaZIaUdGZMUqH_5jf4TabUxb2Hyz0czjkI3RMoCZB6sStj1CWFfENVZrhAM9I2oqBNXV-iGQBrCwKivUY3Me4AoGkbMkNfS2xc75LyhfJ-POKlX6tlXJxW_sQU3PaQrMFPQfU9DrbzVqcx4C6PmibvtEpuHHAaMSkZ_v3BexwPoVPaYrt3Kbmhx15FG7LcaGy8RVed8tHe_eMcfb48f6xei837-m213BSWsiYVQnBtBOXAtRaUiU4TRS03zDQEtlxoELpuBamoqhtFSWWZ2Zq2qkyOBpSzOXo4604qauW7oAbtopyC26twlJRRToHTzHs882w28-1skFE7O2hrXMhRpRmdJCBPLcudzC3LU8sSKpmB_QHA33GS</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 μ m surface emitting laser diodes</title><source>Elsevier ScienceDirect Journals</source><creator>Cho, N.K. ; Kim, K.W. ; Song, J.D. ; Choi, W.J. ; Lee, J.I.</creator><creatorcontrib>Cho, N.K. ; Kim, K.W. ; Song, J.D. ; Choi, W.J. ; Lee, J.I.</creatorcontrib><description>A distributed Bragg reflector (DBR) utilizing the digital alloy Al
0.9Ga
0.1As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 μm optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a highly abrupt boundary of AlAs and GaAs, which supports the formation of a digital-alloy Al
0.9Ga
0.1As layer. The measurement showed that the digital-alloy AlGaAs/GaAs DBR had similar reflection spectra with enhanced uniform distribution over the whole substrate surface compared to the analog-alloy one. In the digital-alloy Al
0.9Ga
0.1As/GaAs DBR cavity, the reflection dip position was measured at around 1273 nm and the standard deviation of the distribution of the reflection dip was 1.31 nm in wavelength over 1/4 of a three-inch wafer.</description><identifier>ISSN: 0038-1098</identifier><identifier>EISSN: 1879-2766</identifier><identifier>DOI: 10.1016/j.ssc.2010.05.010</identifier><identifier>CODEN: SSCOA4</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>A. Thin films ; B. Epitaxy ; D. Optical properties ; E. Light absorption and reflection ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Lasers ; Optics ; Physics ; Semiconductor lasers; laser diodes</subject><ispartof>Solid state communications, 2010-10, Vol.150 (39), p.1955-1958</ispartof><rights>2010 Elsevier Ltd</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038109810002814$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23242042$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Cho, N.K.</creatorcontrib><creatorcontrib>Kim, K.W.</creatorcontrib><creatorcontrib>Song, J.D.</creatorcontrib><creatorcontrib>Choi, W.J.</creatorcontrib><creatorcontrib>Lee, J.I.</creatorcontrib><title>A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 μ m surface emitting laser diodes</title><title>Solid state communications</title><description>A distributed Bragg reflector (DBR) utilizing the digital alloy Al
0.9Ga
0.1As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 μm optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a highly abrupt boundary of AlAs and GaAs, which supports the formation of a digital-alloy Al
0.9Ga
0.1As layer. The measurement showed that the digital-alloy AlGaAs/GaAs DBR had similar reflection spectra with enhanced uniform distribution over the whole substrate surface compared to the analog-alloy one. In the digital-alloy Al
0.9Ga
0.1As/GaAs DBR cavity, the reflection dip position was measured at around 1273 nm and the standard deviation of the distribution of the reflection dip was 1.31 nm in wavelength over 1/4 of a three-inch wafer.</description><subject>A. Thin films</subject><subject>B. Epitaxy</subject><subject>D. Optical properties</subject><subject>E. Light absorption and reflection</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Lasers</subject><subject>Optics</subject><subject>Physics</subject><subject>Semiconductor lasers; laser diodes</subject><issn>0038-1098</issn><issn>1879-2766</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNotUMtKAzEUDaJgrX6Au2xczvTmMY_gqhatQsGNrkOaZIaUdGZMUqH_5jf4TabUxb2Hyz0czjkI3RMoCZB6sStj1CWFfENVZrhAM9I2oqBNXV-iGQBrCwKivUY3Me4AoGkbMkNfS2xc75LyhfJ-POKlX6tlXJxW_sQU3PaQrMFPQfU9DrbzVqcx4C6PmibvtEpuHHAaMSkZ_v3BexwPoVPaYrt3Kbmhx15FG7LcaGy8RVed8tHe_eMcfb48f6xei837-m213BSWsiYVQnBtBOXAtRaUiU4TRS03zDQEtlxoELpuBamoqhtFSWWZ2Zq2qkyOBpSzOXo4604qauW7oAbtopyC26twlJRRToHTzHs882w28-1skFE7O2hrXMhRpRmdJCBPLcudzC3LU8sSKpmB_QHA33GS</recordid><startdate>20101001</startdate><enddate>20101001</enddate><creator>Cho, N.K.</creator><creator>Kim, K.W.</creator><creator>Song, J.D.</creator><creator>Choi, W.J.</creator><creator>Lee, J.I.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope></search><sort><creationdate>20101001</creationdate><title>A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 μ m surface emitting laser diodes</title><author>Cho, N.K. ; Kim, K.W. ; Song, J.D. ; Choi, W.J. ; Lee, J.I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e237t-994cd92404cc9239fc1a2e4d3d710b49c09c689152a67a215e3dbd855d0070243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>A. Thin films</topic><topic>B. Epitaxy</topic><topic>D. Optical properties</topic><topic>E. Light absorption and reflection</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Lasers</topic><topic>Optics</topic><topic>Physics</topic><topic>Semiconductor lasers; laser diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cho, N.K.</creatorcontrib><creatorcontrib>Kim, K.W.</creatorcontrib><creatorcontrib>Song, J.D.</creatorcontrib><creatorcontrib>Choi, W.J.</creatorcontrib><creatorcontrib>Lee, J.I.</creatorcontrib><collection>Pascal-Francis</collection><jtitle>Solid state communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cho, N.K.</au><au>Kim, K.W.</au><au>Song, J.D.</au><au>Choi, W.J.</au><au>Lee, J.I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 μ m surface emitting laser diodes</atitle><jtitle>Solid state communications</jtitle><date>2010-10-01</date><risdate>2010</risdate><volume>150</volume><issue>39</issue><spage>1955</spage><epage>1958</epage><pages>1955-1958</pages><issn>0038-1098</issn><eissn>1879-2766</eissn><coden>SSCOA4</coden><abstract>A distributed Bragg reflector (DBR) utilizing the digital alloy Al
0.9Ga
0.1As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 μm optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a highly abrupt boundary of AlAs and GaAs, which supports the formation of a digital-alloy Al
0.9Ga
0.1As layer. The measurement showed that the digital-alloy AlGaAs/GaAs DBR had similar reflection spectra with enhanced uniform distribution over the whole substrate surface compared to the analog-alloy one. In the digital-alloy Al
0.9Ga
0.1As/GaAs DBR cavity, the reflection dip position was measured at around 1273 nm and the standard deviation of the distribution of the reflection dip was 1.31 nm in wavelength over 1/4 of a three-inch wafer.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.ssc.2010.05.010</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0038-1098 |
| ispartof | Solid state communications, 2010-10, Vol.150 (39), p.1955-1958 |
| issn | 0038-1098 1879-2766 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_23242042 |
| source | Elsevier ScienceDirect Journals |
| subjects | A. Thin films B. Epitaxy D. Optical properties E. Light absorption and reflection Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes |
| title | A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 μ m surface emitting laser diodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T17%3A29%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-elsevier_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20digital-alloy%20AlGaAs/GaAs%20distributed%20Bragg%20reflector%20for%20application%20to%201.3%20%CE%BC%20m%20surface%20emitting%20laser%20diodes&rft.jtitle=Solid%20state%20communications&rft.au=Cho,%20N.K.&rft.date=2010-10-01&rft.volume=150&rft.issue=39&rft.spage=1955&rft.epage=1958&rft.pages=1955-1958&rft.issn=0038-1098&rft.eissn=1879-2766&rft.coden=SSCOA4&rft_id=info:doi/10.1016/j.ssc.2010.05.010&rft_dat=%3Celsevier_pasca%3ES0038109810002814%3C/elsevier_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_els_id=S0038109810002814&rfr_iscdi=true |