Aqueous lateral epitaxy overgrowth of ZnO on (0001 ) GaN at 90 °C Part II: Stress determination
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Veröffentlicht in: | Thin solid films 2010-08, Vol.518 (21), p.6030-6035 |
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container_issue | 21 |
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container_title | Thin solid films |
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creator | FILLERY, Scott P CLARKE, David R LANGE, Frederick F |
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doi_str_mv | 10.1016/j.tsf.2010.03.073 |
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subjects | Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Exact sciences and technology Materials science Methods of nanofabrication Microscopic defects (voids, inclusions, etc.) Nanoscale pattern formation Other semiconductors Physics Specific materials Structure and morphology thickness Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
title | Aqueous lateral epitaxy overgrowth of ZnO on (0001 ) GaN at 90 °C Part II: Stress determination |
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