Incidence of in situ annealing on the nanoscale topographical/electrical properties of the tunnel barrier in sputtered epitaxial Fe/MgO/Fe multilayers

Technological improvements in the magnetotransport performance of Fe/MgO/Fe stacks require nanoscale control over the topographical and electrical properties of the ultrathin MgO barrier. We have statistically investigated the incidence of in situ annealing of the lower Fe layer on the nanoscale top...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2010-06, Vol.43 (21), p.215003-215003
Hauptverfasser:	Kim, D J, Arabski, J, Costa, V Da, Schmerber, G, Bowen, M, Boukari, S, Beaurepaire, E
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Barriers Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in condensed matter Electronic transport in interface structures Exact sciences and technology Iron Magnesium oxide Nanocomposites Nanomaterials Nanostructure Physics Spin polarized transport Tunneling Tunnels (transportation)
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