Absolute determination of the layer-perpendicular band structure of VSe2 and TiS2 by combined very-low-energy electron diffraction and photoemission

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Veröffentlicht in:Journal of physics. Condensed matter 1998-07, Vol.10 (26), p.5749-5766
Hauptverfasser: STROCOV, V. N, STARNBERG, H. I, NILSSON, P. O, BRAUER, H. E, HOLLEBOOM, L. J
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container_end_page 5766
container_issue 26
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container_title Journal of physics. Condensed matter
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creator STROCOV, V. N
STARNBERG, H. I
NILSSON, P. O
BRAUER, H. E
HOLLEBOOM, L. J
description
doi_str_mv 10.1088/0953-8984/10/26/004
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issn 0953-8984
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language eng
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Clean metal, semiconductor, and insulator surfaces
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron and ion emission by liquids and solids
impact phenomena
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Other inorganic compounds
Photoemission and photoelectron spectra
Physics
title Absolute determination of the layer-perpendicular band structure of VSe2 and TiS2 by combined very-low-energy electron diffraction and photoemission
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