Comparison of InGaN-Based LEDs Grown on Conventional Sapphire and Cone-Shape-Patterned Sapphire Substrate : Light-emitting diodes
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| Veröffentlicht in: | IEEE transactions on electron devices 2010, Vol.57 (1), p.157-163 |
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| container_title | IEEE transactions on electron devices |
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| creator | LEE, Jae-Hoon LEE, Dong-Yul OH, Bang-Won LEE, Jung-Hee |
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| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2010, Vol.57 (1), p.157-163 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_22493210 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Comparison of InGaN-Based LEDs Grown on Conventional Sapphire and Cone-Shape-Patterned Sapphire Substrate : Light-emitting diodes |
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