Dependence of GaN HEMT Millimeter-Wave Performance on Temperature: SPECIAL ISSUE ON 2009 INTERNATIONAL MICROWAVE SYMPOSIUM

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2009, Vol.57 (12), p.3205-3211
Hauptverfasser:	DARWISH, Ali M, HUEBSCHMAN, Benjamin D, VIVEIROS, Edward, HUNG, H. Alfred
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Integrated circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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