Wafer2Wafer Etch Monitor via In Situ QCLAS

In this paper, first measurements with a particularly designed quantum-cascade-laser (QCL) arrangement for application in semiconductor industrial environments for in situ wafer-to-wafer etch monitoring are reported. The combination of QCLs and infrared absorption spectroscopy (QCLAS) opens up new p...

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Veröffentlicht in:	IEEE transactions on plasma science 2009-12, Vol.37 (12), p.2335-2341
Hauptverfasser:	Lang, N., Ropcke, J., Steinbach, A., Wege, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Dielectric properties Electromagnetic wave absorption Etching Exact sciences and technology Infrared absorption Infrared spectra infrared spectroscopy Infrared surveillance Lasers Monitoring Monitors Particle measurements Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma Plasma applications Plasma diagnostic techniques and instrumentation Plasma measurements Plasma properties process monitoring Quantum cascade lasers semiconductor lasers Semiconductors Silicon Silicon dioxide Spectroscopy Spectrum analysis Wafers
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