Intentional Distortion of Transistor Shape to Improve Circuit Performance

A mixed-mode 3-D simulation study has been performed for ring oscillators made of 30-nm planar CMOS transistors with nonrectangular channel shapes. Nonrectangular shapes happen unintentionally due to optical proximity effects and can also be introduced intentionally. Transistors with large drains ar...

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Veröffentlicht in:	IEEE electron device letters 2010-01, Vol.31 (1), p.62-64
Hauptverfasser:	Moroz, V., Munkang Choi, Xi-Wei Lin
Format:	Artikel
Sprache:	eng
Schlagworte:	3-D simulation Applied sciences Circuit optimization Circuit properties Circuit simulation Degradation Doping Electric, optical and optoelectronic circuits Electronic circuits Electronics Electrostatics Exact sciences and technology Layout optimization Lithography MOSFETs Nonlinear distortion nonrectangular transistor Optical distortion Oscillators, resonators, synthetizers ring-oscillator benchmarking Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shape Transistors
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