100 GHz+ Gain-B andwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOS
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| creator | CHINGWEI LI, James ELLIOTT, Kenneth R MATTHEWS, David S HITKO, Donald A ZEHNDER, Daniel ROYTER, Yakov PATTERSON, Pamela R HUSSAIN, Tahir JENSEN, Joseph F |
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| fulltext | fulltext |
| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 2009, Vol.44 (10), p.2663-2670 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_pascalfrancis_primary_22157593 |
| source | IEEE Electronic Library (IEL) |
| subjects | Amplifiers Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | 100 GHz+ Gain-B andwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOS |
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