Field quenching in photoconductive CdS as possible reason to enhance Voc and FF in thin-film solar cells
Field‐quenching via Frenkel–Poole excitation of Coulomb attractive hole traps limits the field in the CdS part of the junctions to 50 kV/cm. This is far below the field in typical other pn‐junctions of thin‐film semiconductors, which exceeds 100 kV/cm and approaches tunneling fields that make juncti...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2009-11, Vol.206 (11), p.2665-2668 |
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| container_title | Physica status solidi. A, Applications and materials science |
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| creator | Böer, Karl W. |
| description | Field‐quenching via Frenkel–Poole excitation of Coulomb attractive hole traps limits the field in the CdS part of the junctions to 50 kV/cm. This is far below the field in typical other pn‐junctions of thin‐film semiconductors, which exceeds 100 kV/cm and approaches tunneling fields that make junctions leaky, hence reduces both Voc and FF. Field‐quenched CdS may become electronically inverted, thereby providing a possibility that the junction of the CdS/CdTe cell may extend into the CdS, with the cell becoming a hetero structure. With field quenching a region of negative differential conductivity is created causing a high‐field domain that prevents the maximum electric field in the junction to exceed 50 kV/cm, avoiding tunneling, hence electron leakage through it. A preliminary band model of this cell is proposed. |
| doi_str_mv | 10.1002/pssa.200925291 |
| format | Article |
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This is far below the field in typical other pn‐junctions of thin‐film semiconductors, which exceeds 100 kV/cm and approaches tunneling fields that make junctions leaky, hence reduces both Voc and FF. Field‐quenched CdS may become electronically inverted, thereby providing a possibility that the junction of the CdS/CdTe cell may extend into the CdS, with the cell becoming a hetero structure. With field quenching a region of negative differential conductivity is created causing a high‐field domain that prevents the maximum electric field in the junction to exceed 50 kV/cm, avoiding tunneling, hence electron leakage through it. A preliminary band model of this cell is proposed.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.200925291</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>71.55.Gs ; 73.40.Lq ; 73.50.Gr ; 73.50.Gz ; 73.61.Ga ; 78.20.Jq ; Applied sciences ; Energy ; Exact sciences and technology ; Natural energy ; Photovoltaic conversion ; Solar cells. Photoelectrochemical cells ; Solar energy</subject><ispartof>Physica status solidi. A, Applications and materials science, 2009-11, Vol.206 (11), p.2665-2668</ispartof><rights>Copyright © 2009 WILEY‐VCH Verlag GmbH & Co. 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A preliminary band model of this cell is proposed.</description><subject>71.55.Gs</subject><subject>73.40.Lq</subject><subject>73.50.Gr</subject><subject>73.50.Gz</subject><subject>73.61.Ga</subject><subject>78.20.Jq</subject><subject>Applied sciences</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>Solar cells. 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(a)</addtitle><date>2009-11</date><risdate>2009</risdate><volume>206</volume><issue>11</issue><spage>2665</spage><epage>2668</epage><pages>2665-2668</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>Field‐quenching via Frenkel–Poole excitation of Coulomb attractive hole traps limits the field in the CdS part of the junctions to 50 kV/cm. This is far below the field in typical other pn‐junctions of thin‐film semiconductors, which exceeds 100 kV/cm and approaches tunneling fields that make junctions leaky, hence reduces both Voc and FF. Field‐quenched CdS may become electronically inverted, thereby providing a possibility that the junction of the CdS/CdTe cell may extend into the CdS, with the cell becoming a hetero structure. With field quenching a region of negative differential conductivity is created causing a high‐field domain that prevents the maximum electric field in the junction to exceed 50 kV/cm, avoiding tunneling, hence electron leakage through it. 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| source | Wiley Online Library All Journals |
| subjects | 71.55.Gs 73.40.Lq 73.50.Gr 73.50.Gz 73.61.Ga 78.20.Jq Applied sciences Energy Exact sciences and technology Natural energy Photovoltaic conversion Solar cells. Photoelectrochemical cells Solar energy |
| title | Field quenching in photoconductive CdS as possible reason to enhance Voc and FF in thin-film solar cells |
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