InGaAs Quantum Dots Coupled to a Reservoir of Nonequilibrium Free Carriers

We discuss the impact of a 2D-charged carrier reservoir for high-speed optical amplification and modulated lasing in quantum dot (QD)-based devices by testing the amplification of short trains of high power, femtosecond optical pulses in an InGaAs QD-in-a-well-based semiconductor optical amplifier (...

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Veröffentlicht in:	IEEE journal of quantum electronics 2009-09, Vol.45 (9), p.1121-1128
Hauptverfasser:	Gomis-Bresco, J., Dommers, S., Temnov, V.V., Woggon, U., Martinez-Pastor, J., Laemmlin, M., Bimberg, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Carriers Devices Exact sciences and technology Fundamental areas of phenomenology (including applications) Indium gallium arsenide Indium gallium arsenides Laser modes Laser optical systems: design and operation Mathematical models Optical modulation Optical pulses Optics Physics Quantum dot (QD) Quantum dot lasers Quantum dots Reservoirs Resonators, cavities, amplifiers, arrays, and rings semiconductor optical amplifier (SOA) Semiconductor optical amplifiers Stimulated emission Trains Ultrafast optics
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