Electron scattering and hybrid phonons in low-dimensional laser structures made with GaAs/AlxGa1−xAs

We theoretically and numerically present the hybrid phonon modes for the double heterostructure GaAs/AlxGa1-xAs and their interactions with electrons. More specifically, we have calculated the electron capture within a symmetric quantum well via the emission of hybrid phonons. Our investigation show...

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Veröffentlicht in:	Semiconductor science and technology 2009-09, Vol.24 (9), p.095014-095014 (4)
Hauptverfasser:	Stavrou, V N, Veropoulos, G P
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Quantum wells
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container_end_page	095014 (4)
container_issue	9
container_start_page	095014
container_title	Semiconductor science and technology
container_volume	24
creator	Stavrou, V N Veropoulos, G P
description	We theoretically and numerically present the hybrid phonon modes for the double heterostructure GaAs/AlxGa1-xAs and their interactions with electrons. More specifically, we have calculated the electron capture within a symmetric quantum well via the emission of hybrid phonons. Our investigation shows that the capture rates via the hybrid phonons are matched to the rates predicted by the dielectric continuum (DC) model and the concentration of aluminium which is an important parameter for controlling the electron capture process in light-emitting diodes (LED).
doi_str_mv	10.1088/0268-1242/24/9/095014
format	Article
fullrecord	<record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_pascalfrancis_primary_21946226</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>34876101</sourcerecordid><originalsourceid>FETCH-LOGICAL-i294t-e1b512bc3280f4c839bb89d3c363f35775839c9eff9ed8d5ae3dfd4cc7175ea83</originalsourceid><addsrcrecordid>eNptkM1qGzEURkVooG6SRyho0646GV1JMyMtjUncQqCbZC00-okVZM1UGhP7DbLuI_ZJOsbBm3Z14bvnu3APQp-B3AIRoia0FRVQTmvKa1kT2RDgF2gBrIWqbTl8QIsz8xF9KuWFEADByAL5u-jMlIeEi9HT5HJIz1gnizeHPgeLx82QhlRwSDgOr5UNW5dKGJKOOOriMi5T3plpl13BW20dfg3TBq_1stTLuF9r-PP2e78s1-jS61jczfu8Qk_3d4-r79XDz_WP1fKhClTyqXLQN0B7w6ggnhvBZN8LaZlhLfOs6bpmjox03ktnhW20Y9ZbbkwHXeO0YFfo6-numIdfO1cmtQ3FuBh1csOuKMZF1wKBGfzyDur58eizTiYUNeaw1fmgKEjeUtrOHDlxYRjPWyDqKF4dpaqjVEW5kuokfq58-7fyX1SN1rO_j2mFeA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34876101</pqid></control><display><type>article</type><title>Electron scattering and hybrid phonons in low-dimensional laser structures made with GaAs/AlxGa1−xAs</title><source>HEAL-Link subscriptions: Institute of Physics (IOP) Journals</source><source>Institute of Physics Journals</source><creator>Stavrou, V N ; Veropoulos, G P</creator><creatorcontrib>Stavrou, V N ; Veropoulos, G P</creatorcontrib><description>We theoretically and numerically present the hybrid phonon modes for the double heterostructure GaAs/AlxGa1-xAs and their interactions with electrons. More specifically, we have calculated the electron capture within a symmetric quantum well via the emission of hybrid phonons. Our investigation shows that the capture rates via the hybrid phonons are matched to the rates predicted by the dielectric continuum (DC) model and the concentration of aluminium which is an important parameter for controlling the electron capture process in light-emitting diodes (LED).</description><identifier>ISSN: 0268-1242</identifier><identifier>EISSN: 1361-6641</identifier><identifier>DOI: 10.1088/0268-1242/24/9/095014</identifier><identifier>CODEN: SSTEET</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Physics ; Quantum wells</subject><ispartof>Semiconductor science and technology, 2009-09, Vol.24 (9), p.095014-095014 (4)</ispartof><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0268-1242/24/9/095014/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,777,781,27905,27906,53811,53891</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21946226$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Stavrou, V N</creatorcontrib><creatorcontrib>Veropoulos, G P</creatorcontrib><title>Electron scattering and hybrid phonons in low-dimensional laser structures made with GaAs/AlxGa1−xAs</title><title>Semiconductor science and technology</title><description>We theoretically and numerically present the hybrid phonon modes for the double heterostructure GaAs/AlxGa1-xAs and their interactions with electrons. More specifically, we have calculated the electron capture within a symmetric quantum well via the emission of hybrid phonons. Our investigation shows that the capture rates via the hybrid phonons are matched to the rates predicted by the dielectric continuum (DC) model and the concentration of aluminium which is an important parameter for controlling the electron capture process in light-emitting diodes (LED).</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Quantum wells</subject><issn>0268-1242</issn><issn>1361-6641</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNptkM1qGzEURkVooG6SRyho0646GV1JMyMtjUncQqCbZC00-okVZM1UGhP7DbLuI_ZJOsbBm3Z14bvnu3APQp-B3AIRoia0FRVQTmvKa1kT2RDgF2gBrIWqbTl8QIsz8xF9KuWFEADByAL5u-jMlIeEi9HT5HJIz1gnizeHPgeLx82QhlRwSDgOr5UNW5dKGJKOOOriMi5T3plpl13BW20dfg3TBq_1stTLuF9r-PP2e78s1-jS61jczfu8Qk_3d4-r79XDz_WP1fKhClTyqXLQN0B7w6ggnhvBZN8LaZlhLfOs6bpmjox03ktnhW20Y9ZbbkwHXeO0YFfo6-numIdfO1cmtQ3FuBh1csOuKMZF1wKBGfzyDur58eizTiYUNeaw1fmgKEjeUtrOHDlxYRjPWyDqKF4dpaqjVEW5kuokfq58-7fyX1SN1rO_j2mFeA</recordid><startdate>20090901</startdate><enddate>20090901</enddate><creator>Stavrou, V N</creator><creator>Veropoulos, G P</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>7QF</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20090901</creationdate><title>Electron scattering and hybrid phonons in low-dimensional laser structures made with GaAs/AlxGa1−xAs</title><author>Stavrou, V N ; Veropoulos, G P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i294t-e1b512bc3280f4c839bb89d3c363f35775839c9eff9ed8d5ae3dfd4cc7175ea83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Quantum wells</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Stavrou, V N</creatorcontrib><creatorcontrib>Veropoulos, G P</creatorcontrib><collection>Pascal-Francis</collection><collection>Aluminium Industry Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Semiconductor science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Stavrou, V N</au><au>Veropoulos, G P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron scattering and hybrid phonons in low-dimensional laser structures made with GaAs/AlxGa1−xAs</atitle><jtitle>Semiconductor science and technology</jtitle><date>2009-09-01</date><risdate>2009</risdate><volume>24</volume><issue>9</issue><spage>095014</spage><epage>095014 (4)</epage><pages>095014-095014 (4)</pages><issn>0268-1242</issn><eissn>1361-6641</eissn><coden>SSTEET</coden><abstract>We theoretically and numerically present the hybrid phonon modes for the double heterostructure GaAs/AlxGa1-xAs and their interactions with electrons. More specifically, we have calculated the electron capture within a symmetric quantum well via the emission of hybrid phonons. Our investigation shows that the capture rates via the hybrid phonons are matched to the rates predicted by the dielectric continuum (DC) model and the concentration of aluminium which is an important parameter for controlling the electron capture process in light-emitting diodes (LED).</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0268-1242/24/9/095014</doi></addata></record>
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subjects	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Quantum wells
title	Electron scattering and hybrid phonons in low-dimensional laser structures made with GaAs/AlxGa1−xAs
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T18%3A04%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electron%20scattering%20and%20hybrid%20phonons%20in%20low-dimensional%20laser%20structures%20made%20with%20GaAs/AlxGa1%E2%88%92xAs&rft.jtitle=Semiconductor%20science%20and%20technology&rft.au=Stavrou,%20V%20N&rft.date=2009-09-01&rft.volume=24&rft.issue=9&rft.spage=095014&rft.epage=095014%20(4)&rft.pages=095014-095014%20(4)&rft.issn=0268-1242&rft.eissn=1361-6641&rft.coden=SSTEET&rft_id=info:doi/10.1088/0268-1242/24/9/095014&rft_dat=%3Cproquest_pasca%3E34876101%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=34876101&rft_id=info:pmid/&rfr_iscdi=true