Phase separation and thermally induced metal-insulator transition in heavily doped silicon (Si:B)

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of physics. Condensed matter 1998-04, Vol.10 (13), p.2963-2971
Hauptverfasser:	Kim, K H, Wang, J P, Joiner, W C H, Kim, Y H
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Metal-insulator transitions and other electronic transitions Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	2971
container_issue	13
container_start_page	2963
container_title	Journal of physics. Condensed matter
container_volume	10
creator	Kim, K H Wang, J P Joiner, W C H Kim, Y H
description
doi_str_mv	10.1088/0953-8984/10/13/013
format	Article
fullrecord	<record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_pascalfrancis_primary_2189143</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2189143</sourcerecordid><originalsourceid>FETCH-LOGICAL-c302t-5cf04a444cd5a61fbe7b7f27919e7ac027601936105354be5651da5e6224b4083</originalsourceid><addsrcrecordid>eNqNkE1LxDAQhoMouK7-Ai89eFChdtIkbepNF79gQUEFb2GaJmyk25akK-y_t92VvejB08DM87wwLyGnFK4oSJlAIVgsC8kTCgllCVC2RyaUZTTOuPzYJ5MdcUiOQvgEAC4ZnxB8WWAwUTAdeuxd20TYVFG_MH6Jdb2OXFOttKmipemxjl0TVjX2rY96j01wG8E10cLglxvoqu0GNrja6eFw_uquby-OyYHFOpiTnzkl7_d3b7PHeP788DS7mceaQdrHQlvgyDnXlcCM2tLkZW7TvKCFyVFDmmdAi-EjEEzw0ohM0AqFydKUlxwkmxK2zdW-DcEbqzrvlujXioIaW1JjB2rsYLNhamhpsM62VodBY22Ht7QLOzWlsqB8xK62mGu7f-Ze_hb-AFVXWfYNTNSCSg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Phase separation and thermally induced metal-insulator transition in heavily doped silicon (Si:B)</title><source>Institute of Physics Journals</source><creator>Kim, K H ; Wang, J P ; Joiner, W C H ; Kim, Y H</creator><creatorcontrib>Kim, K H ; Wang, J P ; Joiner, W C H ; Kim, Y H</creatorcontrib><identifier>ISSN: 0953-8984</identifier><identifier>EISSN: 1361-648X</identifier><identifier>DOI: 10.1088/0953-8984/10/13/013</identifier><identifier>CODEN: JCOMEL</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron states ; Exact sciences and technology ; Metal-insulator transitions and other electronic transitions ; Physics</subject><ispartof>Journal of physics. Condensed matter, 1998-04, Vol.10 (13), p.2963-2971</ispartof><rights>1998 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c302t-5cf04a444cd5a61fbe7b7f27919e7ac027601936105354be5651da5e6224b4083</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0953-8984/10/13/013/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53805,53885</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2189143$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, K H</creatorcontrib><creatorcontrib>Wang, J P</creatorcontrib><creatorcontrib>Joiner, W C H</creatorcontrib><creatorcontrib>Kim, Y H</creatorcontrib><title>Phase separation and thermally induced metal-insulator transition in heavily doped silicon (Si:B)</title><title>Journal of physics. Condensed matter</title><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Metal-insulator transitions and other electronic transitions</subject><subject>Physics</subject><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNqNkE1LxDAQhoMouK7-Ai89eFChdtIkbepNF79gQUEFb2GaJmyk25akK-y_t92VvejB08DM87wwLyGnFK4oSJlAIVgsC8kTCgllCVC2RyaUZTTOuPzYJ5MdcUiOQvgEAC4ZnxB8WWAwUTAdeuxd20TYVFG_MH6Jdb2OXFOttKmipemxjl0TVjX2rY96j01wG8E10cLglxvoqu0GNrja6eFw_uquby-OyYHFOpiTnzkl7_d3b7PHeP788DS7mceaQdrHQlvgyDnXlcCM2tLkZW7TvKCFyVFDmmdAi-EjEEzw0ohM0AqFydKUlxwkmxK2zdW-DcEbqzrvlujXioIaW1JjB2rsYLNhamhpsM62VodBY22Ht7QLOzWlsqB8xK62mGu7f-Ze_hb-AFVXWfYNTNSCSg</recordid><startdate>19980406</startdate><enddate>19980406</enddate><creator>Kim, K H</creator><creator>Wang, J P</creator><creator>Joiner, W C H</creator><creator>Kim, Y H</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19980406</creationdate><title>Phase separation and thermally induced metal-insulator transition in heavily doped silicon (Si:B)</title><author>Kim, K H ; Wang, J P ; Joiner, W C H ; Kim, Y H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c302t-5cf04a444cd5a61fbe7b7f27919e7ac027601936105354be5651da5e6224b4083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Metal-insulator transitions and other electronic transitions</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, K H</creatorcontrib><creatorcontrib>Wang, J P</creatorcontrib><creatorcontrib>Joiner, W C H</creatorcontrib><creatorcontrib>Kim, Y H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of physics. Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, K H</au><au>Wang, J P</au><au>Joiner, W C H</au><au>Kim, Y H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Phase separation and thermally induced metal-insulator transition in heavily doped silicon (Si:B)</atitle><jtitle>Journal of physics. Condensed matter</jtitle><date>1998-04-06</date><risdate>1998</risdate><volume>10</volume><issue>13</issue><spage>2963</spage><epage>2971</epage><pages>2963-2971</pages><issn>0953-8984</issn><eissn>1361-648X</eissn><coden>JCOMEL</coden><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0953-8984/10/13/013</doi><tpages>9</tpages></addata></record>
fulltext	fulltext
identifier	ISSN: 0953-8984
ispartof	Journal of physics. Condensed matter, 1998-04, Vol.10 (13), p.2963-2971
issn	0953-8984 1361-648X
language	eng
recordid	cdi_pascalfrancis_primary_2189143
source	Institute of Physics Journals
subjects	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Metal-insulator transitions and other electronic transitions Physics
title	Phase separation and thermally induced metal-insulator transition in heavily doped silicon (Si:B)
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T19%3A46%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Phase%20separation%20and%20thermally%20induced%20metal-insulator%20transition%20in%20heavily%20doped%20silicon%20(Si:B)&rft.jtitle=Journal%20of%20physics.%20Condensed%20matter&rft.au=Kim,%20K%20H&rft.date=1998-04-06&rft.volume=10&rft.issue=13&rft.spage=2963&rft.epage=2971&rft.pages=2963-2971&rft.issn=0953-8984&rft.eissn=1361-648X&rft.coden=JCOMEL&rft_id=info:doi/10.1088/0953-8984/10/13/013&rft_dat=%3Cpascalfrancis_cross%3E2189143%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true