A Low-Consumption Regulated Gate Driver for Power MOSFET
Driving power MOSFET at high switching frequency may induce significant switching power losses. A gate driver with low energy consumption is proposed for power MOSFET in switching power conversion applications. The proposed gate driver regulates the output gate driving voltage for minimizing the los...
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| Veröffentlicht in: | IEEE transactions on power electronics 2009-02, Vol.24 (2), p.532-539 |
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| container_title | IEEE transactions on power electronics |
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| creator | TZENG, Ren-Huei CHEN, Chern-Lin |
| description | Driving power MOSFET at high switching frequency may induce significant switching power losses. A gate driver with low energy consumption is proposed for power MOSFET in switching power conversion applications. The proposed gate driver regulates the output gate driving voltage for minimizing the loss of charging and discharging the gate capacitor. No extra off-chip components are required, and hence, the proposed approach can be completely designed on chip. A 40 V/0.5 mum CMOS technology is utilized and experiments on a boost converter are performed. The power dissipation of the proposed gate driver, compared with the conventional gate driver, can be reduced up to 15.5% and 55.4% under 15 V and 30 V supply voltage, respectively. |
| doi_str_mv | 10.1109/TPEL.2008.2007213 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_pascalfrancis_primary_21140814</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4745755</ieee_id><sourcerecordid>875017921</sourcerecordid><originalsourceid>FETCH-LOGICAL-c417t-1dfb9a6d620e04809337b201a96a14b3fb501ac47afd6fc34b0c877c88e78d883</originalsourceid><addsrcrecordid>eNqFkU1PwzAMhiMEEmPwAxCXCgk4ddhN2iTHaYwPaWiIj3OUpikq6pqRrEz8e1o2ceAAFzuKH7-O8xJyjDBCBHn5_DCdjRIA0QeeIN0hA5QMY0Dgu2QAQqSxkJLuk4MQ3gCQpYADIsbRzK3jiWtCu1iuKtdEj_a1rfXKFtFNF6MrX31YH5XORw9u3Z3u50_X0-dDslfqOtijbR6Sl-52chvP5jd3k_EsNgz5KsaizKXOiiwBC0yApJTnCaCWmUaW0zLvnqEN47osstJQloMRnBshLBeFEHRILja6S-_eWxtWalEFY-taN9a1QUmgGcqUsn9JwbtRXHZ_MyTnf5KUMYb0e_jpL_DNtb7p9lUJZBkXjPdquIGMdyF4W6qlrxbafyoE1ZujenNUb47amtP1nG2FdTC6Lr1uTBV-GhNEBgL7nU42XGWt_SkzzlKepvQLR_-UEw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>206678471</pqid></control><display><type>article</type><title>A Low-Consumption Regulated Gate Driver for Power MOSFET</title><source>IEEE Xplore</source><creator>TZENG, Ren-Huei ; CHEN, Chern-Lin</creator><creatorcontrib>TZENG, Ren-Huei ; CHEN, Chern-Lin</creatorcontrib><description>Driving power MOSFET at high switching frequency may induce significant switching power losses. A gate driver with low energy consumption is proposed for power MOSFET in switching power conversion applications. The proposed gate driver regulates the output gate driving voltage for minimizing the loss of charging and discharging the gate capacitor. No extra off-chip components are required, and hence, the proposed approach can be completely designed on chip. A 40 V/0.5 mum CMOS technology is utilized and experiments on a boost converter are performed. The power dissipation of the proposed gate driver, compared with the conventional gate driver, can be reduced up to 15.5% and 55.4% under 15 V and 30 V supply voltage, respectively.</description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2008.2007213</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitors ; Capacitors. Resistors. Filters ; Circuits ; CMOS ; Dielectric, amorphous and glass solid devices ; Driver circuits ; Drivers ; Driving ; Electric currents ; Electric potential ; Electric power ; Electrical engineering. Electrical power engineering ; Electronics ; Energy consumption ; Exact sciences and technology ; Gate driver ; Gates ; high frequency ; Inductors ; MOSFET circuits ; MOSFETs ; Other multijunction devices. Power transistors. Thyristors ; Power MOSFET ; Resonance ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Switching ; Switching frequency ; Switching loss ; Transistors ; Various equipment and components ; Voltage</subject><ispartof>IEEE transactions on power electronics, 2009-02, Vol.24 (2), p.532-539</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright Institute of Electrical and Electronics Engineers, Inc. (IEEE) Feb 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c417t-1dfb9a6d620e04809337b201a96a14b3fb501ac47afd6fc34b0c877c88e78d883</citedby><cites>FETCH-LOGICAL-c417t-1dfb9a6d620e04809337b201a96a14b3fb501ac47afd6fc34b0c877c88e78d883</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4745755$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4745755$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21140814$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>TZENG, Ren-Huei</creatorcontrib><creatorcontrib>CHEN, Chern-Lin</creatorcontrib><title>A Low-Consumption Regulated Gate Driver for Power MOSFET</title><title>IEEE transactions on power electronics</title><addtitle>TPEL</addtitle><description>Driving power MOSFET at high switching frequency may induce significant switching power losses. A gate driver with low energy consumption is proposed for power MOSFET in switching power conversion applications. The proposed gate driver regulates the output gate driving voltage for minimizing the loss of charging and discharging the gate capacitor. No extra off-chip components are required, and hence, the proposed approach can be completely designed on chip. A 40 V/0.5 mum CMOS technology is utilized and experiments on a boost converter are performed. The power dissipation of the proposed gate driver, compared with the conventional gate driver, can be reduced up to 15.5% and 55.4% under 15 V and 30 V supply voltage, respectively.</description><subject>Applied sciences</subject><subject>Capacitors</subject><subject>Capacitors. Resistors. Filters</subject><subject>Circuits</subject><subject>CMOS</subject><subject>Dielectric, amorphous and glass solid devices</subject><subject>Driver circuits</subject><subject>Drivers</subject><subject>Driving</subject><subject>Electric currents</subject><subject>Electric potential</subject><subject>Electric power</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electronics</subject><subject>Energy consumption</subject><subject>Exact sciences and technology</subject><subject>Gate driver</subject><subject>Gates</subject><subject>high frequency</subject><subject>Inductors</subject><subject>MOSFET circuits</subject><subject>MOSFETs</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Power MOSFET</subject><subject>Resonance</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Switching</subject><subject>Switching frequency</subject><subject>Switching loss</subject><subject>Transistors</subject><subject>Various equipment and components</subject><subject>Voltage</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkU1PwzAMhiMEEmPwAxCXCgk4ddhN2iTHaYwPaWiIj3OUpikq6pqRrEz8e1o2ceAAFzuKH7-O8xJyjDBCBHn5_DCdjRIA0QeeIN0hA5QMY0Dgu2QAQqSxkJLuk4MQ3gCQpYADIsbRzK3jiWtCu1iuKtdEj_a1rfXKFtFNF6MrX31YH5XORw9u3Z3u50_X0-dDslfqOtijbR6Sl-52chvP5jd3k_EsNgz5KsaizKXOiiwBC0yApJTnCaCWmUaW0zLvnqEN47osstJQloMRnBshLBeFEHRILja6S-_eWxtWalEFY-taN9a1QUmgGcqUsn9JwbtRXHZ_MyTnf5KUMYb0e_jpL_DNtb7p9lUJZBkXjPdquIGMdyF4W6qlrxbafyoE1ZujenNUb47amtP1nG2FdTC6Lr1uTBV-GhNEBgL7nU42XGWt_SkzzlKepvQLR_-UEw</recordid><startdate>20090201</startdate><enddate>20090201</enddate><creator>TZENG, Ren-Huei</creator><creator>CHEN, Chern-Lin</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>8FD</scope><scope>FR3</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>F28</scope></search><sort><creationdate>20090201</creationdate><title>A Low-Consumption Regulated Gate Driver for Power MOSFET</title><author>TZENG, Ren-Huei ; CHEN, Chern-Lin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c417t-1dfb9a6d620e04809337b201a96a14b3fb501ac47afd6fc34b0c877c88e78d883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Capacitors</topic><topic>Capacitors. Resistors. Filters</topic><topic>Circuits</topic><topic>CMOS</topic><topic>Dielectric, amorphous and glass solid devices</topic><topic>Driver circuits</topic><topic>Drivers</topic><topic>Driving</topic><topic>Electric currents</topic><topic>Electric potential</topic><topic>Electric power</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electronics</topic><topic>Energy consumption</topic><topic>Exact sciences and technology</topic><topic>Gate driver</topic><topic>Gates</topic><topic>high frequency</topic><topic>Inductors</topic><topic>MOSFET circuits</topic><topic>MOSFETs</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>Power MOSFET</topic><topic>Resonance</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Switching</topic><topic>Switching frequency</topic><topic>Switching loss</topic><topic>Transistors</topic><topic>Various equipment and components</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>TZENG, Ren-Huei</creatorcontrib><creatorcontrib>CHEN, Chern-Lin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><jtitle>IEEE transactions on power electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TZENG, Ren-Huei</au><au>CHEN, Chern-Lin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Low-Consumption Regulated Gate Driver for Power MOSFET</atitle><jtitle>IEEE transactions on power electronics</jtitle><stitle>TPEL</stitle><date>2009-02-01</date><risdate>2009</risdate><volume>24</volume><issue>2</issue><spage>532</spage><epage>539</epage><pages>532-539</pages><issn>0885-8993</issn><eissn>1941-0107</eissn><coden>ITPEE8</coden><abstract>Driving power MOSFET at high switching frequency may induce significant switching power losses. A gate driver with low energy consumption is proposed for power MOSFET in switching power conversion applications. The proposed gate driver regulates the output gate driving voltage for minimizing the loss of charging and discharging the gate capacitor. No extra off-chip components are required, and hence, the proposed approach can be completely designed on chip. A 40 V/0.5 mum CMOS technology is utilized and experiments on a boost converter are performed. The power dissipation of the proposed gate driver, compared with the conventional gate driver, can be reduced up to 15.5% and 55.4% under 15 V and 30 V supply voltage, respectively.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TPEL.2008.2007213</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 0885-8993 |
| ispartof | IEEE transactions on power electronics, 2009-02, Vol.24 (2), p.532-539 |
| issn | 0885-8993 1941-0107 |
| language | eng |
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| subjects | Applied sciences Capacitors Capacitors. Resistors. Filters Circuits CMOS Dielectric, amorphous and glass solid devices Driver circuits Drivers Driving Electric currents Electric potential Electric power Electrical engineering. Electrical power engineering Electronics Energy consumption Exact sciences and technology Gate driver Gates high frequency Inductors MOSFET circuits MOSFETs Other multijunction devices. Power transistors. Thyristors Power MOSFET Resonance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switching Switching frequency Switching loss Transistors Various equipment and components Voltage |
| title | A Low-Consumption Regulated Gate Driver for Power MOSFET |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T07%3A02%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Low-Consumption%20Regulated%20Gate%20Driver%20for%20Power%20MOSFET&rft.jtitle=IEEE%20transactions%20on%20power%20electronics&rft.au=TZENG,%20Ren-Huei&rft.date=2009-02-01&rft.volume=24&rft.issue=2&rft.spage=532&rft.epage=539&rft.pages=532-539&rft.issn=0885-8993&rft.eissn=1941-0107&rft.coden=ITPEE8&rft_id=info:doi/10.1109/TPEL.2008.2007213&rft_dat=%3Cproquest_RIE%3E875017921%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=206678471&rft_id=info:pmid/&rft_ieee_id=4745755&rfr_iscdi=true |