Characterization of the back surface reflection in InP using femtosecond luminescence up-conversion

In this investigation we study the behaviour of the emission from back surface reflection in InP using a femtosecond resolution up-conversion technique. The contributions from the direct emission and the back surface reflection are well distinguished. The experiments show unambiguously that the seco...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2009-02, Vol.42 (4), p.045115-045115 (5)
Hauptverfasser:	Wen, X M, Lincoln, C, Smith, T A, Dao, L V, Hannaford, P
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum dots
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Beschreibung
Zusammenfassung:	In this investigation we study the behaviour of the emission from back surface reflection in InP using a femtosecond resolution up-conversion technique. The contributions from the direct emission and the back surface reflection are well distinguished. The experiments show unambiguously that the secondary rise in the time evolution of the luminescence originates from back surface reflection. Furthermore the emission from back surface reflection is used for a second excitation in the semiconductor nanostructures.
ISSN:	0022-3727 1361-6463
DOI:	10.1088/0022-3727/42/4/045115