Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for VT and Subthreshold Slope

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Veröffentlicht in:	IEEE transactions on electron devices 2008, Vol.55 (12), p.3467-3475
Hauptverfasser:	KLOES, Alexander, WEIDEMANN, Michaela, GOEBEL, Daniel, BOSWORTH, Bryan T
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Molecular electronics, nanoelectronics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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doi_str_mv	10.1109/TED.2008.2006535
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source	IEEE Xplore
subjects	Applied sciences Electronics Exact sciences and technology Molecular electronics, nanoelectronics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
title	Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for VT and Subthreshold Slope
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