Avalanche Amplification in Silicon Lateral Photodiode Fabricated by Standard 0.18 μm CMOS Process

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Veröffentlicht in:	IEICE transactions on electronics 2008-11, Vol.91 (11), p.1820-1823
Hauptverfasser:	IIYAMA, Koichi, SANNOU, Noriaki, TAKAMATSU, Hideki
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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subjects	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title	Avalanche Amplification in Silicon Lateral Photodiode Fabricated by Standard 0.18 μm CMOS Process
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