An InP HBT-Based Oscillator Monolithically Integrated With a Photodiode

An indium phosphide heterojunction bipolar transistor (InP HBT) oscillator chip was monolithically integrated with an on chip p-i-n photodiode. A controllable locking range was obtained in unidirectional injection locking. High-purity optoelectronic oscillator with parasitic modes lower than -4 dBc...

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Veröffentlicht in:	Journal of lightwave technology 2008, Vol.26 (15), p.2679-2683
Hauptverfasser:	Shumakher, E., Magrisso, T., Kraus, S., Cohen-Elias, D., Gavrilov, A., Cohen, S., Eisenstein, G., Ritter, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chips Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Heterojunction bipolar transistor (HBT) Heterojunction bipolar transistors Indium phosphide indium phosphide (InP) Indium phosphides Injection locking Injection-locked oscillators Integrated optics. Optical fibers and wave guides Integrated optoelectronics. Optoelectronic circuits Microwave oscillators Microwave photonics Microwave technology Monolithic integrated circuits Optical and optoelectronic circuits Optical distortion optical oscillators optical phase locked loops optoelectronic Optoelectronic devices Optoelectronics Oscillators Phase noise Photodiodes Power consumption Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	An indium phosphide heterojunction bipolar transistor (InP HBT) oscillator chip was monolithically integrated with an on chip p-i-n photodiode. A controllable locking range was obtained in unidirectional injection locking. High-purity optoelectronic oscillator with parasitic modes lower than -4 dBc resulted from bidirectional injection locking. The optoelectronic oscillator power consumption was 50 mW while providing output power of - 2 dBm . The overall chip size is 1.3 times 0.8 mm.
ISSN:	0733-8724 1558-2213
DOI:	10.1109/JLT.2008.927615