Dependence of structure and properties of Ba(Zr0.25Ti0.75)O3 thin films on temperature and post-annealing
Ba(Zr0.25Ti0.75)O3 thin film was deposited on a LaNiO3-coated SiO2/Si substrate by pulsed-laser deposition. Crystallinity, (h 0 0) texture and surface texture were found to be improved, and the out-of-plane lattice parameter d, polarization P, dielectric constant epsilonr(0) and tunability nr were f...
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| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2008-10, Vol.41 (20), p.205408-205408 (6) |
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| container_end_page | 205408 (6) |
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| container_issue | 20 |
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| container_title | Journal of physics. D, Applied physics |
| container_volume | 41 |
| creator | Doan, V D O Lai, M O Lu, L |
| description | Ba(Zr0.25Ti0.75)O3 thin film was deposited on a LaNiO3-coated SiO2/Si substrate by pulsed-laser deposition. Crystallinity, (h 0 0) texture and surface texture were found to be improved, and the out-of-plane lattice parameter d, polarization P, dielectric constant epsilonr(0) and tunability nr were found to increase with increasing deposition temperature or post-annealing duration. Improvement in crystallinity is believed to be the reason for the improved properties. The increase in the out-of-plane lattice parameter of the highly (h 0 0) textured thin film causes the increases in nr and P, while the changes in epsilonr and nr are closely associated with the changes in epsilonr(0) and P. A high tunability of 76% measured at the frequency of 1 MHz could be achieved for the film deposited and annealed at 640 deg C, showing that Ba(Zr0.25Ti0.75)O3 thin film would be a potential candidate for future tunable devices. |
| doi_str_mv | 10.1088/0022-3727/41/20/205408 |
| format | Article |
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Crystallinity, (h 0 0) texture and surface texture were found to be improved, and the out-of-plane lattice parameter d, polarization P, dielectric constant epsilonr(0) and tunability nr were found to increase with increasing deposition temperature or post-annealing duration. Improvement in crystallinity is believed to be the reason for the improved properties. The increase in the out-of-plane lattice parameter of the highly (h 0 0) textured thin film causes the increases in nr and P, while the changes in epsilonr and nr are closely associated with the changes in epsilonr(0) and P. A high tunability of 76% measured at the frequency of 1 MHz could be achieved for the film deposited and annealed at 640 deg C, showing that Ba(Zr0.25Ti0.75)O3 thin film would be a potential candidate for future tunable devices.</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/0022-3727/41/20/205408</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Dielectric properties of solids and liquids ; Dielectric thin films ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Exact sciences and technology ; Permittivity (dielectric function) ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Journal of physics. 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D, Applied physics</title><description>Ba(Zr0.25Ti0.75)O3 thin film was deposited on a LaNiO3-coated SiO2/Si substrate by pulsed-laser deposition. Crystallinity, (h 0 0) texture and surface texture were found to be improved, and the out-of-plane lattice parameter d, polarization P, dielectric constant epsilonr(0) and tunability nr were found to increase with increasing deposition temperature or post-annealing duration. Improvement in crystallinity is believed to be the reason for the improved properties. The increase in the out-of-plane lattice parameter of the highly (h 0 0) textured thin film causes the increases in nr and P, while the changes in epsilonr and nr are closely associated with the changes in epsilonr(0) and P. A high tunability of 76% measured at the frequency of 1 MHz could be achieved for the film deposited and annealed at 640 deg C, showing that Ba(Zr0.25Ti0.75)O3 thin film would be a potential candidate for future tunable devices.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Dielectric properties of solids and liquids</subject><subject>Dielectric thin films</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Exact sciences and technology</subject><subject>Permittivity (dielectric function)</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNptkE1LxDAQhoMouK7-BelF0UN3J19tetT1Exb2sl68hLRNNdKmNUkP_ntTVtaDwsAc5nlfhgehcwwLDEIsAQhJaU7yJcNLAnE4A3GAZphmOM1YRg_RbA8doxPvPwCAZwLPkLnTg7a1tpVO-ibxwY1VGJ1OlK2TwfWDdsFoP91u1dWrgwXhWwOLnF9vaBLejU0a03YRsEnQXcTVb7z3IVXWatUa-3aKjhrVen32s-fo5eF-u3pK15vH59XNOjUE45ASzgohdKbqpq6VqChwSipGmqKGUmilcpFXUCrKCOQlFrqEkhWEZ6zAtCGEztHlrjd-_zlqH2RnfKXbVlndj15STimf4Dm6-AGVr1TbOGUr4-XgTKfcl4z1GRMFjRzecaYf9lcMcpIvJ69y8ioZjhG5kx8z6d_M_6wc6oZ-A2VAg1s</recordid><startdate>20081021</startdate><enddate>20081021</enddate><creator>Doan, V D O</creator><creator>Lai, M O</creator><creator>Lu, L</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20081021</creationdate><title>Dependence of structure and properties of Ba(Zr0.25Ti0.75)O3 thin films on temperature and post-annealing</title><author>Doan, V D O ; Lai, M O ; Lu, L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i211t-254988e6adfdda8c30532c42f9d0b8eaa787c0ba34207b18eb0b492564913f223</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Dielectric properties of solids and liquids</topic><topic>Dielectric thin films</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Exact sciences and technology</topic><topic>Permittivity (dielectric function)</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Doan, V D O</creatorcontrib><creatorcontrib>Lai, M O</creatorcontrib><creatorcontrib>Lu, L</creatorcontrib><collection>Pascal-Francis</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Doan, V D O</au><au>Lai, M O</au><au>Lu, L</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dependence of structure and properties of Ba(Zr0.25Ti0.75)O3 thin films on temperature and post-annealing</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><date>2008-10-21</date><risdate>2008</risdate><volume>41</volume><issue>20</issue><spage>205408</spage><epage>205408 (6)</epage><pages>205408-205408 (6)</pages><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>Ba(Zr0.25Ti0.75)O3 thin film was deposited on a LaNiO3-coated SiO2/Si substrate by pulsed-laser deposition. Crystallinity, (h 0 0) texture and surface texture were found to be improved, and the out-of-plane lattice parameter d, polarization P, dielectric constant epsilonr(0) and tunability nr were found to increase with increasing deposition temperature or post-annealing duration. Improvement in crystallinity is believed to be the reason for the improved properties. The increase in the out-of-plane lattice parameter of the highly (h 0 0) textured thin film causes the increases in nr and P, while the changes in epsilonr and nr are closely associated with the changes in epsilonr(0) and P. A high tunability of 76% measured at the frequency of 1 MHz could be achieved for the film deposited and annealed at 640 deg C, showing that Ba(Zr0.25Ti0.75)O3 thin film would be a potential candidate for future tunable devices.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0022-3727/41/20/205408</doi></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Dielectric properties of solids and liquids Dielectric thin films Dielectrics, piezoelectrics, and ferroelectrics and their properties Exact sciences and technology Permittivity (dielectric function) Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Dependence of structure and properties of Ba(Zr0.25Ti0.75)O3 thin films on temperature and post-annealing |
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