A GSM/EDGE/WCDMA Adaptive Series-LC Matching Network Using RF-MEMS Switches
To preserve link quality of mobile phones, under fluctuating user conditions, an adaptively controlled series-LC matching circuit is presented for multi-band and multi-mode operation. Following a bottom-up approach, we discuss the design of an RF-MEMS unit cell for the construction of a 5-bit switch...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2008-10, Vol.43 (10), p.2259-2268 |
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description | To preserve link quality of mobile phones, under fluctuating user conditions, an adaptively controlled series-LC matching circuit is presented for multi-band and multi-mode operation. Following a bottom-up approach, we discuss the design of an RF-MEMS unit cell for the construction of a 5-bit switched capacitor array. To reduce dielectric charging of the RF-MEMS devices their average biasing voltage is minimized by applying a bipolar waveform with a small high/low duty-cycle obtained from a high-voltage driver IC. RF-MEMS capacitive switches are applied because of their high linearity, low loss, large tuning range, and easy control in the discrete domain. Application specific RF-MEMS pull-in and pull-out voltage requirements are derived. An impedance phase detector is used to feed mismatch information to an up-down counter providing robust iterative control. The measured MEMS array capacitance tuning ratio is almost a factor 10. Module insertion loss is 0.5 dB at low-band and high-band. Harmonic distortion is less than -85 dBc at 35 dBm output power and the EVM, measured in EDGE-mode, is less than 1% at 27 dBm . The adaptively controlled module, connected to a planar inverted-F antenna, shows desired impedance correction. For extreme hand-effects the maximum module impedance correction at 900 MHz is -75jOmega. |
doi_str_mv | 10.1109/JSSC.2008.2004334 |
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Following a bottom-up approach, we discuss the design of an RF-MEMS unit cell for the construction of a 5-bit switched capacitor array. To reduce dielectric charging of the RF-MEMS devices their average biasing voltage is minimized by applying a bipolar waveform with a small high/low duty-cycle obtained from a high-voltage driver IC. RF-MEMS capacitive switches are applied because of their high linearity, low loss, large tuning range, and easy control in the discrete domain. Application specific RF-MEMS pull-in and pull-out voltage requirements are derived. An impedance phase detector is used to feed mismatch information to an up-down counter providing robust iterative control. The measured MEMS array capacitance tuning ratio is almost a factor 10. Module insertion loss is 0.5 dB at low-band and high-band. Harmonic distortion is less than -85 dBc at 35 dBm output power and the EVM, measured in EDGE-mode, is less than 1% at 27 dBm . The adaptively controlled module, connected to a planar inverted-F antenna, shows desired impedance correction. For extreme hand-effects the maximum module impedance correction at 900 MHz is -75jOmega.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2008.2004334</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Adaptive filters ; Adaptive systems ; Applied sciences ; Arrays ; Circuit properties ; Circuits ; Dielectric losses ; Dielectric, amorphous and glass solid devices ; Distortion measurement ; Electric potential ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; GSM ; Impedance ; impedance matching ; Matching ; Micro- and nanoelectromechanical devices (mems/nems) ; micro-electromechanical devices ; Mobile handsets ; Modules ; Multiaccess communication ; phase detection ; power amplifiers ; Radiofrequency microelectromechanical systems ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; switched capacitor filters ; Switches ; Switching, multiplexing, switched capacity circuits ; Theoretical study. Circuits analysis and design ; Tuning ; Voltage</subject><ispartof>IEEE journal of solid-state circuits, 2008-10, Vol.43 (10), p.2259-2268</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c461t-4abbe2c5539bd5d5a78db3905008a04bff17c6d37430744fbc3bac4d14a9d7c03</citedby><cites>FETCH-LOGICAL-c461t-4abbe2c5539bd5d5a78db3905008a04bff17c6d37430744fbc3bac4d14a9d7c03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4639526$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4639526$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20764607$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>van Bezooijen, A.</creatorcontrib><creatorcontrib>de Jongh, M.A.</creatorcontrib><creatorcontrib>Chanlo, C.</creatorcontrib><creatorcontrib>Ruijs, L.</creatorcontrib><creatorcontrib>van Straten, F.</creatorcontrib><creatorcontrib>Mahmoudi, R.</creatorcontrib><creatorcontrib>van Roermund, A.</creatorcontrib><title>A GSM/EDGE/WCDMA Adaptive Series-LC Matching Network Using RF-MEMS Switches</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>To preserve link quality of mobile phones, under fluctuating user conditions, an adaptively controlled series-LC matching circuit is presented for multi-band and multi-mode operation. Following a bottom-up approach, we discuss the design of an RF-MEMS unit cell for the construction of a 5-bit switched capacitor array. To reduce dielectric charging of the RF-MEMS devices their average biasing voltage is minimized by applying a bipolar waveform with a small high/low duty-cycle obtained from a high-voltage driver IC. RF-MEMS capacitive switches are applied because of their high linearity, low loss, large tuning range, and easy control in the discrete domain. Application specific RF-MEMS pull-in and pull-out voltage requirements are derived. An impedance phase detector is used to feed mismatch information to an up-down counter providing robust iterative control. The measured MEMS array capacitance tuning ratio is almost a factor 10. Module insertion loss is 0.5 dB at low-band and high-band. Harmonic distortion is less than -85 dBc at 35 dBm output power and the EVM, measured in EDGE-mode, is less than 1% at 27 dBm . The adaptively controlled module, connected to a planar inverted-F antenna, shows desired impedance correction. For extreme hand-effects the maximum module impedance correction at 900 MHz is -75jOmega.</description><subject>Adaptive filters</subject><subject>Adaptive systems</subject><subject>Applied sciences</subject><subject>Arrays</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Dielectric losses</subject><subject>Dielectric, amorphous and glass solid devices</subject><subject>Distortion measurement</subject><subject>Electric potential</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>GSM</subject><subject>Impedance</subject><subject>impedance matching</subject><subject>Matching</subject><subject>Micro- and nanoelectromechanical devices (mems/nems)</subject><subject>micro-electromechanical devices</subject><subject>Mobile handsets</subject><subject>Modules</subject><subject>Multiaccess communication</subject><subject>phase detection</subject><subject>power amplifiers</subject><subject>Radiofrequency microelectromechanical systems</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>switched capacitor filters</subject><subject>Switches</subject><subject>Switching, multiplexing, switched capacity circuits</subject><subject>Theoretical study. Circuits analysis and design</subject><subject>Tuning</subject><subject>Voltage</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU9P3DAQxS3USmwpH6DiElUq5RLWE4_t-LgKy_bPppUaUHuzHMehoctma2dB_fZ12BUHDlxmNHq_eZrRI-Qd0HMAqqZfqqo4zyjNx4KM4QGZAOd5CpL9ekUmlEKeqqgdkjch3MYRMYcJ-TpLFlU5nV8s5tOfxUU5S2aN2QzdvUsq5zsX0mWRlGawv7v1TfLNDQ-9_5Nch3H6cZmW87JKqocu6i68Ja9bswrueN-PyPXl_Kr4lC6_Lz4Xs2VqUcCQoqlrl1nOmaob3nAj86ZmivJ4vaFYty1IKxomkVGJ2NaW1cZiA2hUIy1lR-Tjznfj-79bFwZ91wXrViuzdv02aEWZAKEERPL0RZIhZgJoHsGzF0FgggMXmRzR98_Q237r1_FhrSDLOKpHP9hB1vcheNfqje_ujP-ngeoxMD0GpsfA9D6wuPNhb2yCNavWm7XtwtNiRqVAQWXkTnZc55x7klEwxTPB_gNbB5nY</recordid><startdate>20081001</startdate><enddate>20081001</enddate><creator>van Bezooijen, A.</creator><creator>de Jongh, M.A.</creator><creator>Chanlo, C.</creator><creator>Ruijs, L.</creator><creator>van Straten, F.</creator><creator>Mahmoudi, R.</creator><creator>van Roermund, A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>switched capacitor filters</topic><topic>Switches</topic><topic>Switching, multiplexing, switched capacity circuits</topic><topic>Theoretical study. Circuits analysis and design</topic><topic>Tuning</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>van Bezooijen, A.</creatorcontrib><creatorcontrib>de Jongh, M.A.</creatorcontrib><creatorcontrib>Chanlo, C.</creatorcontrib><creatorcontrib>Ruijs, L.</creatorcontrib><creatorcontrib>van Straten, F.</creatorcontrib><creatorcontrib>Mahmoudi, R.</creatorcontrib><creatorcontrib>van Roermund, A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>van Bezooijen, A.</au><au>de Jongh, M.A.</au><au>Chanlo, C.</au><au>Ruijs, L.</au><au>van Straten, F.</au><au>Mahmoudi, R.</au><au>van Roermund, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A GSM/EDGE/WCDMA Adaptive Series-LC Matching Network Using RF-MEMS Switches</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2008-10-01</date><risdate>2008</risdate><volume>43</volume><issue>10</issue><spage>2259</spage><epage>2268</epage><pages>2259-2268</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>To preserve link quality of mobile phones, under fluctuating user conditions, an adaptively controlled series-LC matching circuit is presented for multi-band and multi-mode operation. Following a bottom-up approach, we discuss the design of an RF-MEMS unit cell for the construction of a 5-bit switched capacitor array. To reduce dielectric charging of the RF-MEMS devices their average biasing voltage is minimized by applying a bipolar waveform with a small high/low duty-cycle obtained from a high-voltage driver IC. RF-MEMS capacitive switches are applied because of their high linearity, low loss, large tuning range, and easy control in the discrete domain. Application specific RF-MEMS pull-in and pull-out voltage requirements are derived. An impedance phase detector is used to feed mismatch information to an up-down counter providing robust iterative control. The measured MEMS array capacitance tuning ratio is almost a factor 10. Module insertion loss is 0.5 dB at low-band and high-band. Harmonic distortion is less than -85 dBc at 35 dBm output power and the EVM, measured in EDGE-mode, is less than 1% at 27 dBm . The adaptively controlled module, connected to a planar inverted-F antenna, shows desired impedance correction. For extreme hand-effects the maximum module impedance correction at 900 MHz is -75jOmega.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2008.2004334</doi><tpages>10</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Adaptive filters Adaptive systems Applied sciences Arrays Circuit properties Circuits Dielectric losses Dielectric, amorphous and glass solid devices Distortion measurement Electric potential Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology GSM Impedance impedance matching Matching Micro- and nanoelectromechanical devices (mems/nems) micro-electromechanical devices Mobile handsets Modules Multiaccess communication phase detection power amplifiers Radiofrequency microelectromechanical systems Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices switched capacitor filters Switches Switching, multiplexing, switched capacity circuits Theoretical study. Circuits analysis and design Tuning Voltage |
title | A GSM/EDGE/WCDMA Adaptive Series-LC Matching Network Using RF-MEMS Switches |
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