AIN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate : Heterostructure microelectronics with TWHM 2007

AIN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate : Heterostructure microelectronics with TWHM 2007

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Veröffentlicht in:IEICE transactions on electronics 2008, Vol.91 (7), p.994-1000
Hauptverfasser: SEO, Sanghyun, GHOSE, Kaustav, ZHAO, Guang Yuan, PAVLIDIS, Dimitris
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_title IEICE transactions on electronics
container_volume 91
creator SEO, Sanghyun
GHOSE, Kaustav
ZHAO, Guang Yuan
PAVLIDIS, Dimitris
description
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ispartof IEICE transactions on electronics, 2008, Vol.91 (7), p.994-1000
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1745-1353
language eng
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source J-STAGE
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title AIN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate : Heterostructure microelectronics with TWHM 2007
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