Statistical Compact Model Parameter Extraction by Direct Fitting to Variations

In this paper, a new method of statistical compact model parameter extraction is proposed and described in detail. The method is characterized in that the target of fitting is not the individual transistor, but statistically analyzed results (more specifically, principal components) of measured data...

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Veröffentlicht in:	IEEE transactions on electron devices 2008-06, Vol.55 (6), p.1487-1493
Hauptverfasser:	Takeuchi, K., Hane, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Compact modeling Design. Technologies. Operation analysis. Testing Electric potential Electric, optical and optoelectronic circuits Electronics Equivalence Exact sciences and technology Extraction Fittings integrated circuit modeling Integrated circuits Mathematical models modeling MOSFET circuits parameter extraction random variables semiconductor device modeling Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices statistical compact modeling Theoretical study. Circuits analysis and design Transistors Voltage
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