Combining a Novel Charge-Based Capacitance Measurement (CBCM) Technique and Split C- V Method to Specifically Characterize the STI Stress Effect Along the Width Direction of MOSFET Devices

The shallow trench isolation (STI) stress effect along the length direction on short-channel MOSFET devices has already been widely studied. However, the effect along the width direction has seldom been specifically analyzed. In this paper, we combine a novel charge-based capacitance measurement tec...

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Veröffentlicht in:	IEEE electron device letters 2008-06, Vol.29 (6), p.641-644
Hauptverfasser:	CHANG, Yao-Wen, CHANG, Hsin-Wen, LU, Tao-Cheng, KING, Ya-Chin, CHEN, Kuang-Chao, LU, Chih-Yuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance measurement charge-based capacitance measurement (CBCM) Compressive stress Current measurement Degradation Electronics Exact sciences and technology Length measurement mobility MOS devices MOSFET circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices shallow trench isolation (STI) stress effect split capacitance-voltage ( C - V ) Stress measurement Tensile stress Testing Transistors
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