(111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High- k MISFETs
We have proposed a (111)-faceted metal source and drain (S/D) with a metal gate and a high-k gate dielectric for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The metal S/D is formed by epitaxially grown nickel disilicide. N-type or p-type dopant...
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| Veröffentlicht in: | IEEE transactions on electron devices 2008-05, Vol.55 (5), p.1244-1249 |
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| container_issue | 5 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 55 |
| creator | Mise, N. Migita, S. Watanabe, Y. Satake, H. Nabatame, T. Toriumi, A. |
| description | We have proposed a (111)-faceted metal source and drain (S/D) with a metal gate and a high-k gate dielectric for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The metal S/D is formed by epitaxially grown nickel disilicide. N-type or p-type dopants are segregated in the atomically flat metal/Si interfaces that help to reduce the effective Schottky barrier height between the epitaxial metal and silicon. Therefore, a single type of metal S/D can work for both n-type and p-type MISFETs. The dopant segregation is realized by an ion implantation into the epitaxial silicides and a subsequent low-temperature annealing. Operations of 6-nm-long n-type and p-type silicon-on-insulator MISFETs that came with a fully silicided gate electrode and a high-k gate dielectric were experimentally demonstrated. The excellent short-channel effect immunity due to the trapezoidal channel was also verified by numerical simulation. |
| doi_str_mv | 10.1109/TED.2008.918408 |
| format | Article |
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The metal S/D is formed by epitaxially grown nickel disilicide. N-type or p-type dopants are segregated in the atomically flat metal/Si interfaces that help to reduce the effective Schottky barrier height between the epitaxial metal and silicon. Therefore, a single type of metal S/D can work for both n-type and p-type MISFETs. The dopant segregation is realized by an ion implantation into the epitaxial silicides and a subsequent low-temperature annealing. Operations of 6-nm-long n-type and p-type silicon-on-insulator MISFETs that came with a fully silicided gate electrode and a high-k gate dielectric were experimentally demonstrated. The excellent short-channel effect immunity due to the trapezoidal channel was also verified by numerical simulation.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2008.918408</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Electronics ; Epitaxial metal source and drain (S/D) ; Exact sciences and technology ; high- k gate dielectric ; metal gate ; Microelectronic fabrication (materials and surfaces technology) ; nickel disilicide ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; short-channel effect (SCE) ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1244-1249</ispartof><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c272t-2df8b218ada1fd6a2480017c865ff6b78297512e90f2b20116d2a39a31c3fa773</citedby><cites>FETCH-LOGICAL-c272t-2df8b218ada1fd6a2480017c865ff6b78297512e90f2b20116d2a39a31c3fa773</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4494721$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4494721$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20301515$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Mise, N.</creatorcontrib><creatorcontrib>Migita, S.</creatorcontrib><creatorcontrib>Watanabe, Y.</creatorcontrib><creatorcontrib>Satake, H.</creatorcontrib><creatorcontrib>Nabatame, T.</creatorcontrib><creatorcontrib>Toriumi, A.</creatorcontrib><title>(111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High- k MISFETs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We have proposed a (111)-faceted metal source and drain (S/D) with a metal gate and a high-k gate dielectric for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The metal S/D is formed by epitaxially grown nickel disilicide. N-type or p-type dopants are segregated in the atomically flat metal/Si interfaces that help to reduce the effective Schottky barrier height between the epitaxial metal and silicon. Therefore, a single type of metal S/D can work for both n-type and p-type MISFETs. The dopant segregation is realized by an ion implantation into the epitaxial silicides and a subsequent low-temperature annealing. Operations of 6-nm-long n-type and p-type silicon-on-insulator MISFETs that came with a fully silicided gate electrode and a high-k gate dielectric were experimentally demonstrated. The excellent short-channel effect immunity due to the trapezoidal channel was also verified by numerical simulation.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Epitaxial metal source and drain (S/D)</subject><subject>Exact sciences and technology</subject><subject>high- k gate dielectric</subject><subject>metal gate</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>nickel disilicide</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>short-channel effect (SCE)</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFPAjEQhRujiYiePXjpxUQPC522u22PREBIICaC583QbXF1BdKiCf_eklVOk5l5b_LmI-QWWA-Amf5yNOxxxnTPgJZMn5EO5LnKTCGLc9JhDHRmhBaX5CrGj9QWUvIOeX0AgMdsjNbtXUXnbo8NXWy_g3UUNxUdBqw31G8DHazXwcVY_7jmQBcWm395f1Kv3zP6SefTxXi0jNfkwmMT3c1f7ZK3NH6aZLOX5-nTYJZZrvg-45XXKw4aKwRfFcilTqmU1UXufbFSmhuVA3eGeb7iDKCoOAqDAqzwqJTokn5714ZtjMH5chfqLwyHElh5RFImJOURSdkiSY771rHDmB7wATe2jicbZ4JBDnnS3bW62jl3WktppOIgfgHiVGaX</recordid><startdate>200805</startdate><enddate>200805</enddate><creator>Mise, N.</creator><creator>Migita, S.</creator><creator>Watanabe, Y.</creator><creator>Satake, H.</creator><creator>Nabatame, T.</creator><creator>Toriumi, A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200805</creationdate><title>(111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High- k MISFETs</title><author>Mise, N. ; Migita, S. ; Watanabe, Y. ; Satake, H. ; Nabatame, T. ; Toriumi, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c272t-2df8b218ada1fd6a2480017c865ff6b78297512e90f2b20116d2a39a31c3fa773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Epitaxial metal source and drain (S/D)</topic><topic>Exact sciences and technology</topic><topic>high- k gate dielectric</topic><topic>metal gate</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>nickel disilicide</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>short-channel effect (SCE)</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mise, N.</creatorcontrib><creatorcontrib>Migita, S.</creatorcontrib><creatorcontrib>Watanabe, Y.</creatorcontrib><creatorcontrib>Satake, H.</creatorcontrib><creatorcontrib>Nabatame, T.</creatorcontrib><creatorcontrib>Toriumi, A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mise, N.</au><au>Migita, S.</au><au>Watanabe, Y.</au><au>Satake, H.</au><au>Nabatame, T.</au><au>Toriumi, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>(111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High- k MISFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2008-05</date><risdate>2008</risdate><volume>55</volume><issue>5</issue><spage>1244</spage><epage>1249</epage><pages>1244-1249</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We have proposed a (111)-faceted metal source and drain (S/D) with a metal gate and a high-k gate dielectric for aggressively scaled complementary metal-insulator-semiconductor field-effect transistors (MISFETs). The metal S/D is formed by epitaxially grown nickel disilicide. N-type or p-type dopants are segregated in the atomically flat metal/Si interfaces that help to reduce the effective Schottky barrier height between the epitaxial metal and silicon. Therefore, a single type of metal S/D can work for both n-type and p-type MISFETs. The dopant segregation is realized by an ion implantation into the epitaxial silicides and a subsequent low-temperature annealing. Operations of 6-nm-long n-type and p-type silicon-on-insulator MISFETs that came with a fully silicided gate electrode and a high-k gate dielectric were experimentally demonstrated. The excellent short-channel effect immunity due to the trapezoidal channel was also verified by numerical simulation.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2008.918408</doi><tpages>6</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1244-1249 |
| issn | 0018-9383 1557-9646 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Electronics Epitaxial metal source and drain (S/D) Exact sciences and technology high- k gate dielectric metal gate Microelectronic fabrication (materials and surfaces technology) nickel disilicide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices short-channel effect (SCE) Transistors |
| title | (111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High- k MISFETs |
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