The electron g factor of cylindrical GaAs–Ga1−xAlxAs quantum well wires under magnetic fields applied along the wire axis

The effects of confinement and magnetic fields on the effective electron Lande g factor of GaAs-Ga1-xAlxAs cylindrical quantum well wires are studied. Calculations were carried out via the Ogg-McCombe effective Hamiltonian which is used to describe the non-parabolicity and anisotropy effects on the...

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Veröffentlicht in:	Journal of physics. Condensed matter 2008-04, Vol.20 (17), p.175204-175204 (6)
Hauptverfasser:	López, F E, Rodríguez, B A, Reyes-Gómez, E, Oliveira, L E
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Quantum wells
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container_end_page	175204 (6)
container_issue	17
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container_title	Journal of physics. Condensed matter
container_volume	20
creator	López, F E Rodríguez, B A Reyes-Gómez, E Oliveira, L E
description	The effects of confinement and magnetic fields on the effective electron Lande g factor of GaAs-Ga1-xAlxAs cylindrical quantum well wires are studied. Calculations were carried out via the Ogg-McCombe effective Hamiltonian which is used to describe the non-parabolicity and anisotropy effects on the electron states in the conduction band. The applied magnetic field is taken along the wire axis, and the Schrodinger equation corresponding to electron spin projections parallel and antiparallel to the magnetic field is solved by using an expansion of the electron wavefunctions in terms of two-dimensional harmonic oscillator wavefunctions. Calculations for the electron factor in GaAs-Ga1-xAlxAs cylindrical quantum well wires are compared with results from previous theoretical work. Moreover, the present results clearly indicate the importance of taking into account the non-parabolicity/anisotropy of the conduction band if one is interested in a quantitative understanding of the electron g factor in GaAs-Ga1-xAlxAs quantum well wires.
doi_str_mv	10.1088/0953-8984/20/17/175204
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subjects	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Quantum wells
title	The electron g factor of cylindrical GaAs–Ga1−xAlxAs quantum well wires under magnetic fields applied along the wire axis
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